TRAPPED-ELECTRON AND GENERATED INTERFACE-TRAP EFFECTS IN HOT-ELECTRON-INDUCED MOSFET DEGRADATION.

IEEE Transactions on Electron Devices

Volumn ED-34, Issue 11, 1987, Pages

  Tsuchiya, Toshiaki ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, FIELD EFFECT - DEGRADATION;

HOT-ELECTRON INDUCED DEGRADATION; INTERFACE-TRAP EFFECT; TRAPPED ELECTRON EFFECT;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0023451715     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (15)