Hot-Electron Effects in Silicon-On-Insulator n-Channel MOSFET's

IEEE Transactions on Electron Devices

Volumn 34, Issue 10, 1987, Pages 2173-2177

  Colinge, Jean Pierre ^a  

^a HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, FIELD EFFECT - ELECTRIC FIELD EFFECTS;

HOT ELECTRONS; SOI MOSFET DEGRADATION;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0023438606     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1987.23213     Document Type: Article

References (0)