Relaxation of the non-polar (1010) surfaces of wurtzite AℓN and ZnS

Solid State Communications

Volumn 64, Issue 2, 1987, Pages 231-233

  Tsai, M H ^a   Kasowski, R V ^b   Dow, John D ^a,c  

^a UNIVERSITY OF NOTRE DAME   (United States)

^b DUPONT COMPANY   (United States)

^c UNIVERSITY OF MINNESOTA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

RELAXATION PROCESSES; ZINC SULFIDE;

PSEUDO-FUNCTION METHOD; RIGID ROTATION MODEL; WURTZITE;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0023436091     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(87)91160-4     Document Type: Article

References (15)

1. (110) surface states of GaAs: Sensitivity of electronic structure to surface structure
2. Reconstruction and oxidation of the GaAs(110) surface
3. Summary Abstract: Atomic geometries of the (110) surfaces of III–V compound semiconductors: Determination by total-energy minimization and elastic low-energy electron diffraction