Effects of Elemental Additives on Electrical Resistivity of Silicon Carbide Ceramics

Journal of the American Ceramic Society

Volumn 70, Issue 10, 1987, Pages C‐266-C‐267

  Takeda, Yukio ^a   Nakamura, Kousuke ^a   Maeda, Kunihiro ^a   Matsushita, Yasuo ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CERAMIC MATERIALS - ADDITIVES;

CURRENT-VOLTAGE CHARACTERISTICS; ELECTRICAL RESISTIVITY; ELEMENTAL ADDITIVES;

SILICON CARBIDE;

EID: 0023435825     PISSN: 00027820     EISSN: 15512916     Source Type: Journal    
DOI: 10.1111/j.1151-2916.1987.tb04895.x     Document Type: Article

References (12)

1. Strength of Boron Doped Hot‐Pressed Silicon Carbide
2. 3
3. Nonmetallic Crystals with High Thermal Conductivity
4. Grain Boundary Structure of Highly Resistive SiC Ceramics with High Thermal Conductivity
5. Grain‐Boundary Effect of Highly Resistive SiC Ceramics with High Thermal Conductivity
6. Effects of Elemental Additives on Densification, Microstructure, Strength, and Thermal Conductivity of Silicon Carbide Ceramics
7. A Method of Measuring Specific Resistivity and Hall Effect of Discs of Arbitrary Shape
8. Voltage Nonlinear Properties of Silicon Carbide Varistor
9. Numerical Data, Appendix on the Physical and Electronic Properties of SiC
10. Thermal Conductivity and Electrical Properties of 6H Silicon Carbide
11. Effects of Dopants on the Characteristics of ZnO Varistors
12. Diffusion and Solubility of Impurities in Silicon Carbide