Photo-accelerated MOS-C C-t transient measurements

Solid State Electronics

Volumn 30, Issue 9, 1987, Pages 983-984

  Pierret, R F ^a   Au, W M ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC MEASUREMENTS - CAPACITANCE; SEMICONDUCTOR MATERIALS - CHARGE CARRIERS;

SEMICONDUCTOR DEVICES, MOS;

EID: 0023422004     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(87)90135-3     Document Type: Article

References (9)

1. Simultaneous determination of minority-carrier lifetime and deep doping profile using a double-sweep MOS-C technique
2. Refinements in the measurement of depleted generation lifetime
3. Bulk and optical generation parameters measured with the pulsed MOS capacitor