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Volumn 6, Issue 3, 1987, Pages 151-170

Numerical solution of the hydrodynamic model for a one-dimensional semiconductor device

Author keywords

[No Author keywords available]

Indexed keywords

HYDRODYNAMICS; MATHEMATICAL TECHNIQUES - NUMERICAL METHODS; SEMICONDUCTOR DIODES;

EID: 0023419223     PISSN: 03321649     EISSN: None     Source Type: Journal    
DOI: 10.1108/eb010032     Document Type: Review
Times cited : (56)

References (16)
  • 3
    • 0003990367 scopus 로고
    • Parameter selection for Newton-like methods applicable to nonlinear partial differential equations
    • R.E. Bank and D.J. Rose, Parameter selection for Newton-like methods applicable to nonlinear partial differential equations, SIAM J. Numer. Anal. 17 (1980) 806–822.
    • (1980) SIAM J. Numer. Anal , vol.17 , pp. 806-822
    • Bank, R.E.1    Rose, D.J.2
  • 6
    • 0019054875 scopus 로고
    • Application of Monte Carlo techniques to hot carrier diffusion noise calculation in unipolar semiconducting components
    • J. Zimmermann and E. Constant, Application of Monte Carlo techniques to hot carrier diffusion noise calculation in unipolar semiconducting components, Solid-State Electron. 23 (1980) 915–925.
    • (1980) Solid-State Electron , vol.23 , pp. 915-925
    • Zimmermann, J.1    Constant, E.2
  • 7
    • 84918085349 scopus 로고
    • Physics and Numerical Modeling of Carrier Transport in Submicron Semiconductor Devices
    • August
    • R.K. Cook, Physics and Numerical Modeling of Carrier Transport in Submicron Semiconductor Devices, Thesis, Cornell University, School of Electrical Engineering, August 1981.
    • (1981) Thesis, Cornell University, School of Electrical Engineering
    • Cook, R.K.1
  • 8
    • 0019606795 scopus 로고
    • Diffusion effects and “ballistic transport
    • R.K. Cook and J. Frey, Diffusion effects and “ballistic transport”, IEEE Trans. Electron Dev. ED-28(8) (1981) 951–953.
    • (1981) IEEE Trans. Electron Dev , vol.ED-28 , Issue.8 , pp. 951-953
    • Cook, R.K.1    Frey, J.2
  • 10
    • 0022906082 scopus 로고
    • New approaches to submicron device modeling, in Process and Device Modeling
    • of Advances in W.L. Engl, ed. (Amsterdam: North-Holland)
    • A. Yoshii and M. Tomizawa, New approaches to submicron device modeling, in Process and Device Modeling, vol. 1 of Advances in CAD for VLSI, W.L. Engl, ed. (Amsterdam: North-Holland, 1986).
    • (1986) CAD for VLSI , vol.1
    • Yoshii, A.1    Tomizawa, M.2
  • 13
    • 0009509593 scopus 로고
    • Carrier mobility in silicon empirically related to doping and field
    • D.M. Caughey and R.E. Thomas, Carrier mobility in silicon empirically related to doping and field, Proc. IEEE 52 (1967) 2192–2193.
    • (1967) Proc. IEEE , vol.52 , pp. 2192-2193
    • Caughey, D.M.1    Thomas, R.E.2
  • 14
    • 0020087475 scopus 로고
    • Electron and hole mobilities as a function of concentration and temperature
    • N.D. Arora, J.R. Houser and D.J., Roulston, Electron and hole mobilities as a function of concentration and temperature, IEEE Trans. Electron Dev. ED-29 (1982) 292–295.
    • (1982) IEEE Trans. Electron Dev , vol.ED-29 , pp. 292-295
    • Arora, N.D.1    Houser, J.R.2    Roulston, D.J.3
  • 16
    • 0022060680 scopus 로고
    • Semiconductor device simulation using generalized mobility models
    • S.E. Laux and R.G. Byrnes, Semiconductor device simulation using generalized mobility models, IBM J. Res. Develop. 29(3) (1985) 289–301.
    • (1985) IBM J. Res. Develop , vol.29 , Issue.3 , pp. 289-301
    • Laux, S.E.1    Byrnes, R.G.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.