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Materials Research Bulletin

Volumn 22, Issue 8, 1987, Pages 1113-1123

Electrical studies of reactively sputtered Fe-doped VO2 thin films

(3) Phillips, T E a Murphy, R A a Poehler, T O a

a JOHNS HOPKINS UNIVERSITY APPLIED PHYSICS LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; SEMICONDUCTOR MATERIALS - THIN FILMS;

ACTIVATION ENERGY; DOPING; REACTIVE SPUTTERING; SEMICONDUCTOR-METAL TRANSITION TEMPERATURE; VANADIUM DIOXIDE;

VANADIUM COMPOUNDS;

EID: 0023400380 PISSN: 00255408 EISSN: None Source Type: Journal
DOI: 10.1016/0025-5408(87)90241-8 Document Type: Article

Times cited : (55)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.