The Effect of Heat Treatment on Au Schottky Contacts on β-SiC

IEEE Transactions on Electron Devices

Volumn 34, Issue 8, 1987, Pages 1694-1699

  Ioannou, Dimitris E ^a   Papanicolaou, Nick A ^b   Nordquist, Paul E ^b  

^a UNIVERSITY OF MARYLAND   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GOLD AND ALLOYS; HEAT TREATMENT - ANNEALING;

ANNEALING TEMPERATURES; AS-DEPOSITED CONTACTS; GOLD FILMS; IDEALITY FACTOR; SCHOTTKY CONTACTS;

SEMICONDUCTOR DEVICES, SCHOTTKY BARRIER;

EID: 0023399635     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1987.23139     Document Type: Article

References (17)

1. R. C. Marshall, Jr., and C. E. Ryan, Eds., Silicon Carbide-1973. Columbia, SC: Univ. of South Carolina, 1974.
2. N. W. Jepps and T. F. Page, Polytypic Transformations in Silicon Carbide, Progress in Crystal Growth and Characterization, vol. 7, P. Krishna, Ed. New York: Pergamon, 1983, pp. 259-308.
3. S. Nishino, J. A. Powell, and H. A. Will, “Production of large area single-crystal wafers of cubic SiC for semiconductor devices,” Appl. Phys. Lett., vol. 42, p. 460, 1983.
4. P. Liaw and R. F. Davis, “Epitaxial growth and characterization of 13-SiC thin films,” J, Electrochem. Soc., vol. 132, p. 642, 1985.
5. K. Sasaki, E. Sakuma, S. Misawa, S. Yoshida, and S. Gonda, “High-temperature electrical properties of 3C-SiC epitaxial layers grown by chemical vapor deposition,” Appl. Phys. Lett., vol. 45, p. 73, 1984.
6. S. Yoshida, H. Daimon, M. Yamanaka, E. Sakuma, S. Misawa, and K. Endo, “Schottky-barrier field-effect transistors of BC-SiC,” J. Appl. Phys., vol. 60, p. 2984, 1986.
7. G. Kelner, S. Binari, and K. Sieger, “β-SiC Schottky-barrier FETs,” presented at the 3rd Nat. Rev. Meeting on Growth and Characterization of SiC and its Employment in Semiconductor Applications, North Carolina State Univ., Nov. 1986.
8. S. H. Hagen, “Surface-barrier diodes on silicon carbide,” J. Appl. Phys., vol. 39, p. 1458, 1968.
9. S. Y. Wu and R. B. Campbell, “Au-SiC Schottky barrier diodes,” Solid-State Electron., vol. 17, p. 683, 1974.
10. S. Yoshida, K. Sasaki, E. Sakuma, S. Misawa, and S. Gonda, “Schottky barrier diodes on 3C-SiC,” Appl. Phys. Lett., vol. 46, p. 766, 1985.
11. T. Holm, P. H. Klein, and P. E. R. Nordquist, Jr., “Infrared reflec-1 tance evaluation of chemically vapour deposited beta-SiC films grownon silicon substrates,” J. Appl. Phys., vol. 60, p. 1479, 1986.
12. E. H. Rhoderick, Metal-Semiconductor Contacts. Oxford, England: Clarendon, 1978.
13. R. Kaplan, R. J. Wagner, H. J. Kim, and R. F. Davis, “Electron cyclotron resonance in cubic SiC,” Solid State Commun., vol. 55, p. 67, 1985.
14. B. Segall, S. A. Alterovitz, E. J. Haugland, andL. G. Matus, “Compensation in epitaxial cubic SiC films,” Appl. Phys. Lett., vol. 49, p. 584, 1986.
15. T. O. McCaldin, “Atom movements occurring at solid metal-semiconductor interfaces,” J. Vac. Sci. Technol., vol. 11, p. 990, 1974.
16. R. G. Verenchikova, V. I. Sankin, and E. I. Radovanova, “Influence of vacancies on the formation of surface barriers in SiC polytypes,” Sov. Phys. — Semicond, vol. 17, no. 10, p. 1123, 1983.
17. C. A. Mead, “Metal-semiconductor surface barriers,” Solid-State Electron., vol. 9, p. 1023, 1966.