22ghz 1/4 frequency divider using aigaas/gaas hbt

Electronics Letters

Volumn 23, Issue 17, 1987, Pages 881-882

  Yamauchi, Y ^a   Nagata, K ^a   Nakajima, O ^a   Ito, H ^a   Nittono, T ^a   Ishibashi, T ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Digital circuits; Frequency dividers

Indexed keywords

SEMICONDUCTING ALUMINUM COMPOUNDS; TRANSISTORS, BIPOLAR;

DIVIDE-BY-FOUR FREQUENCY DIVIDER; EMITTER CAP LAYERS; HBT; POWER DISSIPATION; TOGGLE FREQUENCY;

ELECTRONIC CIRCUITS, FREQUENCY DIVIDING;

EID: 0023387537     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19870623     Document Type: Article

References (8)

1. SAKAI, T., KONAKA, S., YAMAMOTO, Y., and SUZUKI, M.: ‘Prospects of SST technology for high speed LSI’. IEEE IEDM tech. digest, Dec. 1985, pp. 18-21
2. JENSEN, J. F., SALMON, L. G., DEAKIN, D. S., and DELANEY, M. J.: ‘Ultrahigh-speed GaAs static frequency dividers’. IEEE IEDM tech. digest, Dec. 1986, pp. 476-479
3. chang, m. f., asbeck, p. m., wang, k. c., sullivan, g. j., and miller, d. l.: ‘AIGaAs/GaAs heterojunction bipolar transistor circuits with improved high-speed performance’, Electron. Lett., 1986, 22, pp. 1173-1174
4. ISHIBASHI, T., YAMAUCHI, Y., NAKAJIMA, O., NAGATA, K., and ITO, H.: ‘High speed frequency dividers using self-aligned AIGaAs/GaAs heterojunction bipolar transistors’, IEEE Electron Device Lett., 1987, EDL-8, pp. 194-196
5. yamauchi, y., and ishibashi, t.: ‘Dependence of switching performance on emitter resistance and current gain in GaAs/AlGaAs HBT ECL gates’, Trans. IECE Jpn., 1986, E67, pp. 286-287
6. NAGATA, K., NAKAJIMA, O., NITTONO, T., ITO, H., and ISHIBASHI, T.:'Improved AIGaAs/GaAs HBT performance by InGaAs emitter cap layer’, Electron. Lett., 1987, 23, pp. 566-568
7. NAKAJIMA, O., NAGATA, K., YAMAUCHI, Y., ITO, H., and ISHIBASHI, T.: ‘High-speed AIGaAs/GaAs HBTs with proton-implanted buried layers’. IEEE IEDM 86, 1986, pp. 266-269
8. yamauchi, Y., and ishibashi, t.: ‘Electron velocity overshoot in the collector depletion layer of AIGaAs/GaAs HBTs’, IEEE Electron Device Lett., 1986, EDL-7, pp. 655-657