Thermal Expansion and Thermal Expansion Anisotropy of SiC Polytypes

Journal of the American Ceramic Society

Volumn 70, Issue 7, 1987, Pages 445-448

  LI, Z ^a   BRADT, R C ^a  

^a UNIVERSITY OF WASHINGTON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS - STRUCTURE; MATERIALS SCIENCE;

CRYSTAL STRUCTURE EFFECTS; HEXAGONAL FORMS; RUTILE;

SILICON CARBIDE;

EID: 0023384716     PISSN: 00027820     EISSN: 15512916     Source Type: Journal    
DOI: 10.1111/j.1151-2916.1987.tb05673.x     Document Type: Article

References (17)

1. Thermal Expansion
2. A Review of the Structure of Silicon Carbide
3. Thermal Expansion of the Cubic (3C) Polytype of SiC
4. Thermal Expansion of the Hexagonal (4H) Polytype of SiC
5. Thermal Expansion of the Hexagonal (6H) Polytype of SiC
6. Polytypic Transformations in Silicon Carbide
7. Crystal Structures and Thermal Expansion
8. Dependence of Physical Properties on Polytype Structure
9. Thermal Expansion Anisotropy of Corundum‐Type Structure Single Cation Oxides
10. Tessellated Stresses, Part III
11. Microstructural Strains due to Thermal Anisotropy
12. 5
13. Thermal Expansion of Some Diamondlike Crystals
14. Nonmetallic Crystals with High Thermal Conductivities