Weak bond-dangling bond conversion in amorphous silicon

Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties

Volumn 56, Issue 1, 1987, Pages 63-70

  Stutzmann, Martin ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGEN;

CHARGE-INDUCED BREAKING; DANGLING-BOND DENSITY; HYDROGENATED AMORPHOUS SILICON; WEAK BOND-DANGLING BOND CONVERSION;

SEMICONDUCTING SILICON;

EID: 0023383357     PISSN: 13642812     EISSN: None     Source Type: Journal    
DOI: 10.1080/13642818708211224     Document Type: Article

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