InGaSbAs Injection Lasers

IEEE Journal of Quantum Electronics

Volumn 23, Issue 6, 1987, Pages 1089-1094

  Drakin, A E ^a   Eliseev, Peter G ^a   Sverdlov, B N ^a   Bochkarev, A E ^b   Dolginov, L M ^b   Druzhinina, L V ^b  

^a LEBEDEV PHYSICAL INSTITUTE   (Russian Federation)

^b INSTITUTE OF RARE METALS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICES - HETEROJUNCTIONS; WAVEGUIDES, OPTICAL;

GALLIUM ALUMINUM ANTIMONIDE ARSENIDE; INDIUM GALLIUM ANTIMONIDE ARSENIDE; LIQUID PHASE EPITAXY (LPE);

LASERS, INJECTION;

EID: 0023367512     PISSN: 00189197     EISSN: 15581713     Source Type: Journal    
DOI: 10.1109/JQE.1987.1073467     Document Type: Article

References (12)

1. L. M. Dolginov, P. G. Eliseev, and M. G. Milvidskii, “Multinary semiconductor alloys and their application in lasers,” Kvant. Elektron., vol. 3, no. 7, pp. 1384–1393, 1976.
2. Sov. J. Quantum. Electron., vol. 6, p. 747, 1976, for the English translation.
3. Zh. I. Alferov, D. Z. Garbuzov, L. M. Dolginov, P. G. Eliseev, and M. G. Milvidski, “Multinary semiconductor solid solutions in optoelectronics,” Vestn. Akad. Nauk SSSR, no. 45, pp. 31–36, 1978.
4. L. M. Dolginov, L. V. Druzhinina, P. G. Eliseev, M. G. Milvidski, and V. Yu. Rogulin, “Epitaxial structure,” Author cert. for invention, no. 581 755, filed June 16, 1975; Bull. Inventions, no. 11, 1981.
5. L. M. Dolginov, L. V. Druzhinina, P. G. Eliseev, A. N. Lapshin, M. G. Milvidski, and B. N. Sverdlov, “Injection laser on the quaternary InGaASb,” Kvant. Elektron., vo1. 5, no. 3, pp. 703-704, 1987.
6. Sov. J. Quaratum. Electron., vol. 8, p. 416, 1978.
7. N. Kobayashi, Y. Horikoshi, and C. Uemura, “Room temperature operation of the InGaAsSb/AlGaAsSb DH laser at 1.8 µm wavelength,” Japan. J. Appl. Phys., vol. 19, no. 1, pp. 30–32, 1980.
8. A. E. Bochkarev, L. M. Dolginov, A. E. Drakin, L. V. Druzhinina, P. G. Eliseev, and B. N. Sverdlov, “Laser emission (1.9-2.3 µ, 300 K) of InGaSbAs injection lasers,” Kvant. Elektron., vol. 12, no. 6, p. 1309, 1985.
9. C. Caneau, A. K. Srivastava, A. G. Dentai, J. L. Zuskind, and M. A. Pollack, “Room temperature GaInAsSb/AlGaAsSb DH injection laser at 2.2 µm,” Electron. Lett,. vol. 21, no. 18, pp. 815–817, 1985.
10. A. E. Bochkarev, L. M. Dolginov, A. E. Drakin, L. V. Druzhinina, P. G. Eliseev, and B. N. Sverdlov, Kvant. Elektron., vol. 13, no. 10, pp. 2119–2120, 1986.
11. L. M. Dolginov, A. E. Drakin, L. V. Druzhinina, P. G. Eliseev, M. G. Milvidski, B. N. Sverdlov, and V. A. Skripkin, “Injection lasers on the base of AlGaAsSb/GaSb and InGaAsSb/GaSb heterojunction structures,” in Injection Lasers, Proc. Phys. Inst. Acad. Sci. Nauk, vol. 141, pp. 46–61, 1983.
12. D. Botez and M. Ettenberg, “Beamwidth approximations for the fundamental mode in symmetric double heterojunction lasers,” IEEE J. Quantum. Electron., vol. QE-14, pp. 827–834, 1978.