Self-annihilation of antiphase boundary in gaas on si(100) grown by molecular beam epitaxy

Japanese Journal of Applied Physics

Volumn 26, Issue 6A, 1987, Pages 944-946

  Kawabe, Mitsuo ^a   Ueda, Toshio ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON;

ANTIPHASE BOUNDARY; SELF-ANNIHILATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0023367109     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.26.L944     Document Type: Article

References (16)

1. B. Y. Tsaur and G. M. Metze: Appl. Phys. Lett. 45 (1984) 535.
2. W. I. Wang: Appl. Phys. Lett. 44 (1984) 1149.
3. W. T. Msselink, T. Henderson, J. Klein, R. Fischer, P. Pearah, H. Morkoç, M. Hafich, P. D. Wang and G. Y. Robinson: Appi. Phys. Lett. 45 (1984) 1309.
4. S. Nishi, H. Inomata, M. Akiyama and K. Kaminishi: Jpn. J. Appi. Phys. 24 (1985) L391.
5. R. Fischer, H. Morkoç, D. A. Neuman, H. Zabel, C. Choi, N. Otuka, M. Longerbone and L. P. Erickson: J. Appi. Phys. 60 (1986) 1640.
6. M. Akiyama, Y. Kawarada and K. Kaminishi: J. Cryst. Growth64 (1984) 21.
7. T. Soga, S. Hattori, S. Sakai, M. Takeyasu and M. Umeno: J. Appi. Phys. 57 (1985) 4578.
8. J. W. Lee, H. Shichijo, H. L. Tsai and R. J. Matyi: Appi. Phys. Lett. 59 (1987) 31.
9. H. Morkoç, C. K. Peng, T. Henderson, W. Kopp, R. Fischer, L. P. Erickson, M. D. Longerbone and R. C. Youngman: IEEE Electron Dev. Lett. EDL-6 (1985) 381.
10. M. Kawabe and T. Ueda: Jpn. J. Appi. Phys. 25 (1986) 285.
11. M. Kawabe, T. Ueda and H. Takasugi: Jpn. J. Appi. Phys. 26 (1987) LI 14.
12. T. Ueda, S. Nishi, Y. Kawarada, M. Akiyama and K. Kaminishi: Jpn. J. Appi. Phys. 25 (1986) L789.
13. R. Kaplan: Surface Sci. 93 (1980) 145.
14. P. M. Petroff: J. Vac. Sci. Technol. B4 (1986) 874.
15. N. H. Cho, B. C. DeCooman, C. B. Carter, R. Fletcher and D. K. Wagner: Appi. Phys. Lett. 47 (1985) 879.
16. H. Takasugi, M. Kawabe and Y. Bando: Jpn. J. Appi. Phys. 26 (1987) to be published.