Narrow pulse measurement of drain characteristics of gaas mesfets

Electronics Letters

Volumn 23, Issue 13, 1987, Pages 686-687

  Barton, T M ^a   Snowden, C M ^a   Richardson, J R ^a   Ladbrooke, P H ^b  

^a UNIVERSITY OF LEEDS   (United Kingdom)

^b GENERAL ELECTRIC COMPANY   (United States)

Author keywords

FETs; Semiconductor devices and materials

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE - MEASUREMENTS;

FAST-RISE-TIME PULSES; LONG PULSE; MESFET; NARROW PULSE MEASUREMENT; SUBSTRATE TRAPS;

TRANSISTORS, FIELD EFFECT;

EID: 0023364944     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19870489     Document Type: Article

References (3)

1. camacho-penalosa, c., and aitchison, c. s.: 'Modelling frequency dependence of output impedance of a microwave MESFET at low frequencies', Electron. Lett., 1985, 21, pp. 528-529
2. wieder, h. h.: 'Surface Fermi level of III-V compound semiconductor-dielectric interfaces', in bauer, r. s. (Ed.): 'Surfaces and interfaces: physics and electronics' (North-Holland, Amsterdam, 1983), pp. 390-405
3. barton, t. m., and ladbrooke, p. h.: The role of the device surface in the high voltage behaviour of the GaAs MESFET', Solid-State Electron., 1986, 29, pp. 807-813