High speed response in optoelectronic gated thyristor

Japanese Journal of Applied Physics

Volumn 26, Issue 6A, 1987, Pages 1014-1016

  Suezawa, Masashi ^a   Sumino, Koji ^a,a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

OPTOELECTRONIC DEVICES;

OPTOELECTRONIC GATED THYRISTOR;

THYRISTORS;

EID: 0023363787     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.26.L1014     Document Type: Article

References (6)

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3. R. S. Mand, Y. Ashizawa and M. Nakamura: Electron. Lett. 22(1986) 952.
4. S. M. Sze: Physics of Semiconductor (John Wiley and Sons, N.Y., 1981) 2nd ed., Chap. 4, p. 190.
5. G. W. Tayler, R. S. Mand, J. G. Simmons and A. Y. Cho: J. Appl. Phys. 50 (1987) 338.
6. J. Shimizu, H. Oka, S. Funakawa, H. Gamo, T. Iida and A. Kawakami: IEEE Trans. Electrons Devices ED-23 (1976) 883.