A study of channel avalanche breakdown in scaled n-mosfet’s

IEEE Transactions on Electron Devices

Volumn 34, Issue 5, 1987, Pages 1066-1073

  Laux, Steven E ^a   Gaensslen, Fritz H ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN - MATHEMATICAL MODELS;

CHANNEL AVALANCHE BREAKDOWN; ISOTHERMAL CONSTANT FIELD SCALING; UNSCALED DEVICES;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0023346895     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1987.23046     Document Type: Article

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