Nonlinear analysis of gaas mesfet amplifiers, mixers, and distributed amplifiers using the harmonic balance technique

IEEE Transactions on Microwave Theory and Techniques

Volumn 35, Issue 4, 1987, Pages 441-447

  Curtice, Walter R ^a  

^a SARNOFF CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC CIRCUITS, MIXER - COMPUTER AIDED ANALYSIS; MATHEMATICAL TECHNIQUES - HARMONIC ANALYSIS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICES, FIELD EFFECT; TRANSISTORS, FIELD EFFECT;

CONVERGE PROPERTIES; HARMONIC BALANCE (HB); METAL-SEMICONDUCTOR FET (MESFET); SAMPLING POINTS NYQUIST RATE;

AMPLIFIERS;

EID: 0023331142     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/TMTT.1987.1133668     Document Type: Note

References (4)

1. V. Rizzoli, A. Lipparini, and E. Marazzi, “A general-purpose program for nonlinear microwave circuit design,” IEEE Trans. Microwave Theory Tech., vol. MTT-31, pp. 762–769, Sept. 1983.
2. W.R. Curtice and M. Ettenberg, “A nonlinear GaAs FET model for use in the design of output circuits for power amplifier,” IEEE Trans. Microwave Theory Tech., vol. MTT-33, pp. 1383–1394, Dec. 1985.
3. K.S. Kundert and A. Sangiovanni-Vincentelli, “Simulation of nonlinear circuit in the frequency domain,” IEEE Trans. Computer-Aided Design, vol. CAD-5, no. 4, pp. 521–535, 1986.
4. SPICE, Electronics Research Laboratory, University of California, Berkeley, CA.