A gaas mesfet mixer with very low intermodulation

IEEE Transactions on Microwave Theory and Techniques

Volumn 35, Issue 4, 1987, Pages 425-429

  Maas, Stephen A ^a  

^a AEROSPACE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC MEASUREMENTS - RESISTANCE; ELECTRONIC CIRCUITS, MIXER - MICROWAVES; INTERMODULATION; OSCILLATORS; SEMICONDUCTING GALLIUM ARSENIDE;

LOCAL OSCILLATOR (LO) SIGNALS; METAL-SEMICONDUCTOR FET (MESFET); X-BAND MIXER;

SEMICONDUCTOR DEVICES, FIELD EFFECT;

EID: 0023329784     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/TMTT.1987.1133665     Document Type: Note

References (12)

1. E.F. Beane, “Prediction of mixer intermodulation levels as function of local oscillator power,” IEEE Trans. Electromagn. Compat., vol. EMC-13, pp. 56–63, May 1971.
2. C.P. Tou and B.C. Chang, “A technique for intermodulation reduction in mixers,” in IEEE Symp. Electromagn. Compat. Dig., 1981, pp. 128–132.
3. J.H. Lepoff and A.M. Cowley, “Improved intermodulation rejection in mixers,” IEEE Trans. Microwave Theory Tech., vol. MTT-14, pp. 618–623, Dec. 1966.
4. E. Markard, B. Levine, and B. Bossard, “Intermodulation distortion improvement in parametric upconverter,” Proc. IEEE, vol. 55, no. 11, pp. 2060–2061, Nov. 1967.
5. R.L. Ernst, P. Torrione, W.Y. Pan, and M.M. Morris, “Designing microwave mixers for increased dynamic range,” IEEE Trans. Electromagn. Compatvol. EMC-11, pp. 130–138, Nov. 1969.
6. S.M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981.
7. S. Maas, Microwave Mixers. Dedham, MA: Artech House, 1986.
8. S. Maas, “An interactive diode mixer analysis program,” Aerospace Corp. Tech. Rep. TR-0086(6925–02)-8, 1986.
9. U. Ablassmeier, W. Kellner, and H. Kniepkamp, “GaAs FET upconverter for TV tuner,” IEEE Trans. Electron Devices, vol. ED-27, pp. 1156–1159, June 1980.
10. W.C. Tsai, S.F. Paik, and B.S. Hewitt, “An X-band dual-gate FET upconverter,” IEEE Int. Microwave Symp. Dig., 1979, pp. 495–497.
11. R.A. Pucel, D. Masse, and R. Bera, “Performance of GaAs MESFET mixers at x-band,” IEEE Trans. Microwave Theory Tech., vol. MTT-24, pp. 351–360, June 1976.
12. K. Kanazawa et al., “A GaAs double-balanced dual-gate FET mixer IC for UHF receiver front-end applications,” IEEE Trans. Microwave Theory Tech., vol. MTT-33, pp. 1548–1554, Dec. 1985.