CMOS Integrated Silicon Pressure Sensor

IEEE Journal of Solid-State Circuits

Volumn 22, Issue 2, 1987, Pages 151-156

  Ishihara, Tsutomu ^a   Suzuki, Kenichiro ^a   Suwazono, Shinobu ^a   Hirata, Masaki ^a   Tanigawa, Hiroshi ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS; INTEGRATED CIRCUITS - ETCHING; SEMICONDUCTING SILICON - ANISOTROPY; SEMICONDUCTOR DEVICES, MOS - STRESSES; SENSORS - THERMAL EFFECTS;

COMPLEMENTARY MOS (CMOS); FOUR-ARM PIEZORESISTANCE BRIDGE EXCITATION CIRCUIT; TWIN-SQUARE DIAPHRAGM FORMATION;

PRESSURE TRANSDUCERS;

EID: 0023329777     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/JSSC.1987.1052696     Document Type: Article

References (14)

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