Large Signal Nonlinear Distortion Prediction for a Single-Mode Laser Diode Under Microwave Intensity Modulation

Journal of Lightwave Technology

Volumn 5, Issue 3, 1987, Pages 305-315

  Way, W I ^a  

^a TELCORDIA TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MICROWAVES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DIODES;

INTERMODULATION; SIGNAL DISTORTION;

LASERS, SEMICONDUCTOR;

EID: 0023313473     PISSN: 07338724     EISSN: 15582213     Source Type: Journal    
DOI: 10.1109/JLT.1987.1075517     Document Type: Article

References (22)

1. K. Y. Lau and A. Yariv, “Intermodulation distortion in a directly modulated semiconductor injection laser,” Appl. Phys. Lett., vol. 45, pp. 1034–1036, Nov. 1984.
2. M. T. Abuelma'atti, “Carrier-to-intermodulation performance of multiple FM/FDM carriers through a GaAlAs heterojunction laser diode,” IEEE Trans. Commun., pp. 246–248, Mar. 1985
3. K. K. Kikushima and Y. Suematsu, “Nonlinear distortion properties of laser diodes influenced by coherent reflected waves,” Trans. IECE Japan, vol. E67, pp. 19-25, Jan. 1984.
4. M. T. Abuelma'atti, “Nonlinear distortion performance of semiconductor laser diodes influenced by coherent-refleeted waves,” J. Lightwave Technol., pp, 1343—1350, Dec. 1985.
5. T. E. Dareie, R. S. Tucker, and G. J. Sullivan, “Intermodolation and harmonic distortion in InGaAsP lasers,” Electron. Lett., vol. 21, no. 16, pp. 665–666, Aug. 1985; also, “Errata” Electron. Lett., vol. 22. p. 619, 1986.
6. T. Hong and Y. Suematsu. “Harmonic distortion in direct modulation of injection lasers,” Trans. IECE Japan, pp. 142–147, Mar. 1979.
7. M. Morishita et. al. “Impedance characteristics of double-heterostructure laser diode,” Solid-State Electron., vol. 22, pp. 951–962, 1979.
8. J. Katz et al., “The intrinsic electrical equivalent circuit of a laser diode,” IEEE J. Quantum Electron., vol. QE-17, pp. 4–7, Jan. 1981.
9. L. Figueroa, C. W. Slayman, and H. W. Yen, “High frequency characteristics of GaAlAs injection lasers,” IEEE J. Quantum Electron., vol. QE-18, pp. 1718–1727, Oct. 1982.
10. R. S. Tucker and D. J. Pope, “Microwave circuit models of semiconductor injection lasers,” IEEE Trans. Microwave Theory Tech., vol. MTT-31, pp. 289–294, Mar. 1983.
11. K. Y. Lau and A. Yariv, “Ultra-high speed semiconductor laser,” IEEE J. Quantum Electron., vol. QE-21, pp. 121–147, Feb. 1985.
12. R. S. Tucker and D. J. Pope, “Circuit modeling of the effect of diffusion on damping in a narrow-stripe semiconductor laser,” IEEE J. Quantum Electron., vol. QE-19, pp, 1179–1183, July 1983.
13. R. S. Tucker and I. P. Kaminow, “High-frequency characteristics of directly modulated in GaAsP ridge waveguide and buried heterostructure lasers,” J. Lightwave Technol., vol. LT-2, pp. 385–393, Aug. 1984.
14. R. S. Tucker, “Circuit model of double-heterojunction laser below threshold,” Proc. Inst. Elec. Eng., vol. 128, pt. I, no, 3, pp. 101-106, June 1981.
15. R. S. Tucker, “Large-signal circuit model for simulation of injection-laser modulation dynamics,” Proc. Inst. Elec. Eng., vol. 128, pt, I, no. 5, pp. 180–184, Oct, 1981.
16. W. I. Way and A. Afrashteh, “Linearity characterization of connec-torized laser diodes under microwave intensity modulation by AM/ AM and AM/PM measurements,” presented at IEEE MTT-S Int. Microwave Symp., 1986, pap. Z-3.
17. J. Minkoff, “Intermodulation noise in solid-state power amplifiers for wide-band signal transmission,” in IEEE MTT-S Int. Microwave Symp. Tech. Dig., 1982, pp. 304–313.
18. K. Y. Lau, Ortel Corporation, Alhambra-CA.
19. K. Y. Lau, “Semiconductor sources and detectors in fiberoptic systems,” Microwave J., pp. 97-107, Apr. 1985.
20. H. Kressel and J. K. Butler, Semiconductor Lasers and Heterojunction LED's, New York: Academic, 1977.
21. O. Hirota and Y. Suematsu, “Quantum intensity noise of directly modulated laser diode influenced by reflected waves,” Trans, IECE Japan, vol. E-65, pp. 94–101, Feb. 1982.
22. K. Kishino et. al., “Wavelength variation of 1.6-μm wavelength buried heterostructure GalnAsP/lnP lasers due to direct modulation,” IEEE J. Quantum Electron., vol. QE-18, pp. 343–351, Mar, 1982.