Source-Drain Contact Resistance in CMOS with Self-Aligned TiSi2

IEEE Transactions on Electron Devices

Volumn 34, Issue 3, 1987, Pages 575-580

  Taur, Yuan ^a   Sun, Jack Yuan Chen ^a   Moy, Dan ^a   Wang, L K ^a   Davari, Bijan ^a   Klepner, Stephen P ^a   Ting, Chung Yu ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC MEASUREMENTS - RESISTANCE; SEMICONDUCTING SILICON COMPOUNDS - DOPING; SEMICONDUCTOR DEVICES, MOS - JUNCTIONS;

COMPLEMENTARY MOS (CMOS); CONTACT RESISTIVITY; ELECTRICALLY-LONG CONTACTS TRANSMISSION LINE MODEL; SELF-ALIGNED TITANIUM SILICIDE; SOURCE-DRAIN CONTACT RESISTANCE;

ELECTRIC CONTACTS;

EID: 0023313303     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1987.22965     Document Type: Article

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