On the concentration dependence of the thermal ionisation energy of impurities in InP

Semiconductor Science and Technology

Volumn 2, Issue 3, 1987, Pages 177-178

  Podor, B ^a  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC PROPERTIES; IONIZATION;

INDIUM PHOSPHIDE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0023311755     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/2/3/008     Document Type: Article

References (17)

1. The Hall effect in III-V semiconductor assessment
2. Electrical characteristics of III–V compounds grown by MOVPE
3. Observations on residual donors in GaP LPE
4. Electrical properties of donors in gallium phosphide