A Desktop-Computer-Based Calculation of High-Frequency MOS C-V Curves

IEEE Transactions on Electron Devices

Volumn 34, Issue 2, 1987, Pages 427-432

  Rastegar, Bahador ^b  

^a OREGON STATE UNIVERSITY   (United States)

^b Sharp Microelectronics Inc ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; COMPUTERS, MICROCOMPUTER - APPLICATIONS; MATHEMATICAL MODELS;

CAPACITANCE-VOLTAGE CHARACTERISTIC;

SEMICONDUCTOR DEVICES, MOS;

EID: 0023292334     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1987.22939     Document Type: Article

References (12)

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8. R. C. Jaeger and F. H. Gaensslen “Simulation of impurity freezeout through numerical solution of Poisson's equation with application to MOS device behavior”, IEEE Trans. Electron Devices, vol. ED-27, pp. 914, 1980.
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10. R. C. Jaeger and F. H. Gaensslen “Anomalous MOS capacitance behavior in depletion-mode structures”, IEEE Trans. Electron Devices, vol. ED-31, pp. 1916, 1984.
11. S. M. Sze Physics of Semiconductor Devices, 1981 2nd ed., New York: Wiley
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