The characteristic of acel in ZnS:Er3+ thin films grown by atomic layer epitaxy method(ALE)

Journal of Luminescence

Volumn 40-41, Issue C, 1988, Pages 788-789

  Meng, Lijian ^a   Zhong, G Z ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; RELAXATION PROCESSES; ZINC SULFIDE - THIN FILMS;

ATOMIC LAYER EPITAXY; CROSS-RELAXATION MODEL;

ERBIUM AND ALLOYS;

EID: 0023291201     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-2313(88)90438-3     Document Type: Article

References (5)

1. Atomic Layer Epitaxy