-
1
-
-
85024347773
-
-
University of Duisburg, presented at 3rd GaAs simulation workshop
-
TREW, R. J., STEER, M. B., and CHAMBERLAIN, D.: ‘Parasitic effects upon the high-frequency performance of three-terminal devices’. 7-8 Oct. 1986, University of Duisburg, presented at 3rd GaAs simulation workshop
-
(1986)
j., steer, m. b., and chamberlain, d.: ‘Parasitic effects upon the high-frequency performance of three-terminal devices
, vol.7
, Issue.8
-
-
TREW, R.1
-
2
-
-
0022810412
-
b., and trew, r. j.: ‘High frequency limits of millimetre-wave transistors
-
STEER, M. B., and TREW, R. J.: ‘High frequency limits of millimetre-wave transistors’, IEEE Electron Device Lett., 1986, EDL-7, pp. 640-642
-
(1986)
EDL-7
, pp. 640-642
-
-
STEER, M.1
-
3
-
-
0015662412
-
b., and schmidt, p.: ‘High-frequency limitations of abrupt-junction FETs
-
DAS, M. B., and SCHMIDT, P.: ‘High-frequency limitations of abrupt-junction FETs’, IEEE Trans., 1973, ED-20, pp. 779-792
-
(1973)
ED-20
, pp. 779-792
-
-
DAS, M.1
-
4
-
-
0022136609
-
c., palmateer, s. c., smith, p. m., mishra, u. k., duh, k. h. g., and hwang, j. c. m.: ‘Millimeter-wave low-noise high electron mobility transistors
-
CHAO, P. C., PALMATEER, S. C., SMITH, P. M., MISHRA, U. K., DUH, K. H. G., and HWANG, J. C. M.: ‘Millimeter-wave low-noise high electron mobility transistors’, IEEE Electron Device Lett., 1985, EDL-6, pp. 531-533
-
(1985)
EDL-6
, pp. 531-533
-
-
CHAO, P.1
-
5
-
-
0021179035
-
Ultrahigh frequency operation of ion-implanted GaAs metal-semiconductor field-effect transistors
-
FENG, M., KANBER, H., EU, V. K., WATKINS, E., and HACKETT, L. R.: ‘Ultrahigh frequency operation of ion-implanted GaAs metal-semiconductor field-effect transistors’, Appl. Phys. Lett., 1984, 44, pp. 231-233
-
(1984)
Appl. Phys. Lett.
, vol.44
, pp. 231-233
-
-
FENG, M.1
KANBER, H.2
EU, V.K.3
WATKINS, E.4
-
6
-
-
0021304897
-
A 69 GHz monolithic FET oscillator
-
MAKI, D. W., SCHELLENBERG, J. M., YAMASAKI, H., and LIU, L. C. T.: ‘A 69 GHz monolithic FET oscillator’. IEEE 1984 microwave and millimeter-wave monolithic circuits symposium digest of papers, 3-4 June 1984, pp. 62-66
-
(1984)
IEEE 1984 microwave and millimeter-wave monolithic circuits symposium digest of papers
, vol.3
, Issue.4
, pp. 62-66
-
-
MAKI, D.W.1
SCHELLENBERG, J.M.2
YAMASAKI, H.3
-
7
-
-
0022118583
-
o., hollis, M. a., nichols, K. b., rabe, s., vera, a., and chen, c. l.: ‘18.5 dB gain at 18 GHz with a permeable base transistor
-
BOZLER, C. O., HOLLIS, M. A., NICHOLS, K. B., RABE, S., VERA, A., and CHEN, C. L.: ‘18.5 dB gain at 18 GHz with a permeable base transistor’, IEEE Electron Device Lett., 1985, EDL-6, pp. 456-458
-
(1985)
EDL-6
, pp. 456-458
-
-
BOZLER, C.1
-
8
-
-
0022120352
-
y.: Two-dimensional simulation of MODFET and GaAs gate heterojunction FET‘s
-
TANG, J. Y.: Two-dimensional simulation of MODFET and GaAs gate heterojunction FET‘s’, IEEE Trans., 1985, ED-32, pp. 1817-1823
-
(1985)
ED-32
, pp. 1817-1823
-
-
TANG, J.1
-
9
-
-
0019022397
-
o., and alley, g. d.: ‘Fabrication and numerical simulation of the permeable base transistor
-
BOZLER, C. O., and ALLEY, G. D.: ‘Fabrication and numerical simulation of the permeable base transistor’, ED-32, 1980, ED-27, pp. 1128-1141
-
(1980)
ED-32
, pp. 1128-1141
-
-
BOZLER, C.1
-
10
-
-
0016963551
-
Microwave field-effect transistors
-
LIECHTI, C. A.: ‘Microwave field-effect transistors—1976’, ED-32, 1976, MTT-24, pp. 279-300
-
(1976)
ED-32
, pp. 279-300
-
-
LIECHTI, C.1
-
11
-
-
0022683311
-
k.: ‘MODFET ensemble Monte Carlo model including the quasi-two-dimension electron gas
-
RAVAIOLI, U., and FERRY, D. K.: ‘MODFET ensemble Monte Carlo model including the quasi-two-dimension electron gas’, ED-32, 1986, ED-33, pp. 677-680
-
(1986)
ED-32
, pp. 677-680
-
-
RAVAIOLI, U.1
FERRY, D.2
|