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Volumn 23, Issue 4, 1987, Pages 149-151

Millimetre-Wave Performance of State-of-The-Art Mesfet, Modfet And Pbt Transistors

Author keywords

Microwave devices and components; Transistors

Indexed keywords

SEMICONDUCTOR DEVICES, FIELD EFFECT - MILLIMETER WAVES; TRANSISTORS, BIPOLAR;

EID: 0023287494     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19870105     Document Type: Article
Times cited : (6)

References (11)
  • 2
    • 0022810412 scopus 로고
    • b., and trew, r. j.: ‘High frequency limits of millimetre-wave transistors
    • STEER, M. B., and TREW, R. J.: ‘High frequency limits of millimetre-wave transistors’, IEEE Electron Device Lett., 1986, EDL-7, pp. 640-642
    • (1986) EDL-7 , pp. 640-642
    • STEER, M.1
  • 3
    • 0015662412 scopus 로고
    • b., and schmidt, p.: ‘High-frequency limitations of abrupt-junction FETs
    • DAS, M. B., and SCHMIDT, P.: ‘High-frequency limitations of abrupt-junction FETs’, IEEE Trans., 1973, ED-20, pp. 779-792
    • (1973) ED-20 , pp. 779-792
    • DAS, M.1
  • 4
    • 0022136609 scopus 로고
    • c., palmateer, s. c., smith, p. m., mishra, u. k., duh, k. h. g., and hwang, j. c. m.: ‘Millimeter-wave low-noise high electron mobility transistors
    • CHAO, P. C., PALMATEER, S. C., SMITH, P. M., MISHRA, U. K., DUH, K. H. G., and HWANG, J. C. M.: ‘Millimeter-wave low-noise high electron mobility transistors’, IEEE Electron Device Lett., 1985, EDL-6, pp. 531-533
    • (1985) EDL-6 , pp. 531-533
    • CHAO, P.1
  • 5
    • 0021179035 scopus 로고
    • Ultrahigh frequency operation of ion-implanted GaAs metal-semiconductor field-effect transistors
    • FENG, M., KANBER, H., EU, V. K., WATKINS, E., and HACKETT, L. R.: ‘Ultrahigh frequency operation of ion-implanted GaAs metal-semiconductor field-effect transistors’, Appl. Phys. Lett., 1984, 44, pp. 231-233
    • (1984) Appl. Phys. Lett. , vol.44 , pp. 231-233
    • FENG, M.1    KANBER, H.2    EU, V.K.3    WATKINS, E.4
  • 7
    • 0022118583 scopus 로고
    • o., hollis, M. a., nichols, K. b., rabe, s., vera, a., and chen, c. l.: ‘18.5 dB gain at 18 GHz with a permeable base transistor
    • BOZLER, C. O., HOLLIS, M. A., NICHOLS, K. B., RABE, S., VERA, A., and CHEN, C. L.: ‘18.5 dB gain at 18 GHz with a permeable base transistor’, IEEE Electron Device Lett., 1985, EDL-6, pp. 456-458
    • (1985) EDL-6 , pp. 456-458
    • BOZLER, C.1
  • 8
    • 0022120352 scopus 로고
    • y.: Two-dimensional simulation of MODFET and GaAs gate heterojunction FET‘s
    • TANG, J. Y.: Two-dimensional simulation of MODFET and GaAs gate heterojunction FET‘s’, IEEE Trans., 1985, ED-32, pp. 1817-1823
    • (1985) ED-32 , pp. 1817-1823
    • TANG, J.1
  • 9
    • 0019022397 scopus 로고
    • o., and alley, g. d.: ‘Fabrication and numerical simulation of the permeable base transistor
    • BOZLER, C. O., and ALLEY, G. D.: ‘Fabrication and numerical simulation of the permeable base transistor’, ED-32, 1980, ED-27, pp. 1128-1141
    • (1980) ED-32 , pp. 1128-1141
    • BOZLER, C.1
  • 10
    • 0016963551 scopus 로고
    • Microwave field-effect transistors
    • LIECHTI, C. A.: ‘Microwave field-effect transistors—1976’, ED-32, 1976, MTT-24, pp. 279-300
    • (1976) ED-32 , pp. 279-300
    • LIECHTI, C.1
  • 11
    • 0022683311 scopus 로고
    • k.: ‘MODFET ensemble Monte Carlo model including the quasi-two-dimension electron gas
    • RAVAIOLI, U., and FERRY, D. K.: ‘MODFET ensemble Monte Carlo model including the quasi-two-dimension electron gas’, ED-32, 1986, ED-33, pp. 677-680
    • (1986) ED-32 , pp. 677-680
    • RAVAIOLI, U.1    FERRY, D.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.