Crystal growth of large-area single-crystal CdTe and CdZnTe by the computer-controlled vertical modified-Bridgman process

Journal of Crystal Growth

Volumn 86, Issue 1-4, 1988, Pages 111-117

  Sen, S ^a   Konkel, W H ^a   Tighe, S J ^a   Bland, L G ^a   Sharma, S R ^a   Taylor, R E ^a  

^a Santa Barbara Research Center   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTROL SYSTEMS - COMPUTER APPLICATIONS; CRYSTALS - GROWING;

SOLID-LIQUID INTERFACE; VERTICAL MODIFIED-BRIDGMAN PROCESS;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0023166614     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(90)90707-R     Document Type: Article

References (8)

1. The optimum choice of reflexion to reveal dislocations in gallium arsenide by X-ray reflexion topography