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Volumn 34, Issue 1, 1987, Pages 130-138

Nonideal Base Current in Bipolar Transistors at Low Temperatures

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC MEASUREMENTS - CURRENT;

EID: 0023089947     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1987.22895     Document Type: Article
Times cited : (68)

References (17)
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    • Kamgar, A.1
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    • n-channel enhancement-mode MOSFET characteristics from 10 to 300 K
    • S. K. Tewksbury, “n-channel enhancement-mode MOSFET characteristics from 10 to 300 K,” IEEE Trans. Electron Devices, vol. ED-28, pp. 1519-1529, 1981.
    • (1981) IEEE Trans. Electron Devices , vol.ED-28 , pp. 1519-1529
    • Tewksbury, S.K.1
  • 9
    • 0019569281 scopus 로고
    • The effect of base doping on the performance of Si bipolar transistors at low temperatures
    • W. P. Dumke, “The effect of base doping on the performance of Si bipolar transistors at low temperatures,” IEEE Trans. Electron Devices, vol. ED-28, pp. 494-500, 1981.
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    • Dumke, W.P.1
  • 11
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    • Temperature dependence of Nonideal component of base current im micropower n-p-n transistors
    • C. Gonzalez-Bris and E. Munoz, “Temperature dependence of Nonideal component of base current im micropower n-p-n transistors,” IEEE Trans. Electron Devices, vol. ED-31, pp. 1503-1505, 1984.
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    • Gonzalez-Bris, C.1    Munoz, E.2
  • 13
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    • Electric field effect on the thermal emission of traps in semiconductor junctions
    • G. Vincent, A. Chantre, and D. Bois, “Electric field effect on the thermal emission of traps in semiconductor junctions,” J. Appl. Phys., vol. 50, no. 8, pp. 5484-5487, 1979.
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    • Vincent, G.1    Chantre, A.2    Bois, D.3
  • 14
    • 0018457220 scopus 로고
    • Temperature dependent threshold behavior of depletion mode MOSFET's
    • F. H. Gaensslen and R. C. Jaeger, “Temperature dependent threshold behavior of depletion mode MOSFET's,” Solid-Stale Electron., vol. 22, pp. 423-430, 1979.
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  • 15
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  • 16
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    • Kinetic studies of silicon-silicon dioxide interface trap annealing using rapid thermal processing
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.