-
1
-
-
0014893260
-
The role of low temperatures in the operation of logic circuitry
-
R. W. Keyes, E. P. Harris, and K. L. Konnerth, “The role of low temperatures in the operation of logic circuitry,” Proc. IEEE, vol. 58, pp. 1914-1932, 1970.
-
(1970)
Proc. IEEE
, vol.58
, pp. 1914-1932
-
-
Keyes, R.W.1
Harris, E.P.2
Konnerth, K.L.3
-
2
-
-
0017466169
-
Very small MOSFET's for low-temperature operation
-
F. H. Gaensslen, V. L. Rideout, E. J. Walker, and J. J. Walker, “Very small MOSFET's for low-temperature operation,” IEEE Trans. Electron Devices, vol. ED-24, pp. 218-229, 1977.
-
(1977)
IEEE Trans. Electron Devices
, vol.ED-24
, pp. 218-229
-
-
Gaensslen, F.H.1
Rideout, V.L.2
Walker, E.J.3
Walker, J.J.4
-
3
-
-
0019542002
-
Behavior of electrically small depletion mode MOSFETs at low temperature
-
F. H. Gaensslen and R. C. Jaeger, “Behavior of electrically small depletion mode MOSFETs at low temperature,” Solid-State Electron., vol. 24, pp. 215-220, 1981.
-
(1981)
Solid-State Electron.
, vol.24
, pp. 215-220
-
-
Gaensslen, F.H.1
Jaeger, R.C.2
-
4
-
-
0020169598
-
Miniaturization of Si MOSFET's at 77 K
-
A. Kamgar, “Miniaturization of Si MOSFET's at 77 K,” IEEE Trans. Electron Devices, vol. ED-29, pp. 1226-1228, 1982.
-
(1982)
IEEE Trans. Electron Devices
, vol.ED-29
, pp. 1226-1228
-
-
Kamgar, A.1
-
5
-
-
0020920216
-
Operation of bulk CMOS devices at very low temperatures
-
S. Hanamura, M. Aoki, T. Masukara, O. Minato, Y. Sakai, and T. Hayashida, “Operation of bulk CMOS devices at very low temperatures,” in Dig. Tech. 1983 Symp. VLSI Technol., pp. 46-47, 1983.
-
(1983)
Dig. Tech. 1983 Symp. VLSI Technol.
, pp. 46-47
-
-
Hanamura, S.1
Aoki, M.2
Masukara, T.3
Minato, O.4
Sakai, Y.5
Hayashida, T.6
-
6
-
-
84939370177
-
Cryogenic behavior of scaled CMOS devices
-
J. W. Schrankler, J. S. T. Huang, R. S. L. Lutze, H. P. Vyas, and G. D. Kirchner, “Cryogenic behavior of scaled CMOS devices,” in IEDM Tech. Dig., pp. 574-577, 1984.
-
(1984)
IEDM Tech. Dig.
, pp. 574-577
-
-
Schrankler, J.W.1
Huang, J.S.T.2
Lutze, R.S.L.3
Vyas, H.P.4
Kirchner, G.D.5
-
7
-
-
0019683903
-
n-channel enhancement-mode MOSFET characteristics from 10 to 300 K
-
S. K. Tewksbury, “n-channel enhancement-mode MOSFET characteristics from 10 to 300 K,” IEEE Trans. Electron Devices, vol. ED-28, pp. 1519-1529, 1981.
-
(1981)
IEEE Trans. Electron Devices
, vol.ED-28
, pp. 1519-1529
-
-
Tewksbury, S.K.1
-
8
-
-
0021640288
-
1.5 μm gate CMOS operated at 77 K
-
I. Kato, H. Oka, S. Hijiya, and T. Nakamura, “1.5 μm gate CMOS operated at 77 K,” in IEDM Tech. Dig., pp. 601-603, 1984.
-
(1984)
IEDM Tech. Dig.
, pp. 601-603
-
-
Kato, I.1
Oka, H.2
Hijiya, S.3
Nakamura, T.4
-
9
-
-
0019569281
-
The effect of base doping on the performance of Si bipolar transistors at low temperatures
-
W. P. Dumke, “The effect of base doping on the performance of Si bipolar transistors at low temperatures,” IEEE Trans. Electron Devices, vol. ED-28, pp. 494-500, 1981.
-
(1981)
IEEE Trans. Electron Devices
, vol.ED-28
, pp. 494-500
-
-
Dumke, W.P.1
-
11
-
-
0021501348
-
Temperature dependence of Nonideal component of base current im micropower n-p-n transistors
-
C. Gonzalez-Bris and E. Munoz, “Temperature dependence of Nonideal component of base current im micropower n-p-n transistors,” IEEE Trans. Electron Devices, vol. ED-31, pp. 1503-1505, 1984.
-
(1984)
IEEE Trans. Electron Devices
, vol.ED-31
, pp. 1503-1505
-
-
Gonzalez-Bris, C.1
Munoz, E.2
-
13
-
-
0018506275
-
Electric field effect on the thermal emission of traps in semiconductor junctions
-
G. Vincent, A. Chantre, and D. Bois, “Electric field effect on the thermal emission of traps in semiconductor junctions,” J. Appl. Phys., vol. 50, no. 8, pp. 5484-5487, 1979.
-
(1979)
J. Appl. Phys.
, vol.50
, Issue.8
, pp. 5484-5487
-
-
Vincent, G.1
Chantre, A.2
Bois, D.3
-
14
-
-
0018457220
-
Temperature dependent threshold behavior of depletion mode MOSFET's
-
F. H. Gaensslen and R. C. Jaeger, “Temperature dependent threshold behavior of depletion mode MOSFET's,” Solid-Stale Electron., vol. 22, pp. 423-430, 1979.
-
(1979)
Solid-Stale Electron.
, vol.22
, pp. 423-430
-
-
Gaensslen, F.H.1
Jaeger, R.C.2
-
15
-
-
0020764223
-
Energy-band distortion in highly doped silicon
-
D. S. Lee and J. G. Fossum, “Energy-band distortion in highly doped silicon,” IEEE Trans. Electron Devices, vol. ED-30, pp. 626-634, 1983.
-
(1983)
IEEE Trans. Electron Devices
, vol.ED-30
, pp. 626-634
-
-
Lee, D.S.1
Fossum, J.G.2
-
16
-
-
84939342479
-
Kinetic studies of silicon-silicon dioxide interface trap annealing using rapid thermal processing
-
M. L. Reed and J. D. Plummer, “Kinetic studies of silicon-silicon dioxide interface trap annealing using rapid thermal processing,” Proc. MRS, 1985.
-
(1985)
Proc. MRS
-
-
Reed, M.L.1
Plummer, J.D.2
-
17
-
-
36849101960
-
The Poole-Frenkel effect with compensation present
-
J. R. Yeargan and H. L. Taylor, “The Poole-Frenkel effect with compensation present,” J. Appl. Phys., vol. 39, no. 12, pp. 5600-5604, 1968.
-
(1968)
J. Appl. Phys.
, vol.39
, Issue.12
, pp. 5600-5604
-
-
Yeargan, J.R.1
Taylor, H.L.2
|