POWER SUPPLY VOLTAGE FOR FUTURE CMOS VLSI IN HALF AND SUB MICROMETER.

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1986, Pages 399-402

  Kakumu, Masakazu ^a   Kinugawa, Masaaki ^a   Hashimoto, Kazuhiko ^a   Matsunanga, Jun ichi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS - RELIABILITY; SEMICONDUCTOR DEVICES, MOS - PERFORMANCE;

MOBILITY DEGRADATION; PARASITIC CAPACITANCES AND RESISTANCES; POWER SUPPLY VOLTAGE EFFECTS; SUBMICROMETER COMPLEMENTARY MOS (CMOS) VLSI;

INTEGRATED CIRCUITS, VLSI;

EID: 0022987950     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/iedm.1986.191202     Document Type: Conference Paper

References (11)