High temperature process limitation on TiSi2

Journal of the Electrochemical Society

Volumn 133, Issue 12, 1986, Pages 2621-2652

  Ting, C Y ^a   d'Heurle, F M ^a   lyer, S S ^a   Fryer, P M ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTERMETALLICS - PROCESSING; SEMICONDUCTING SILICON - SUBSTRATES;

GATE INTEGRITY; SHALLOW JUNCTION; SHEET RESISTANCE;

TITANIUM SILICON ALLOYS;

EID: 0022986079     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2108491     Document Type: Article

References (8)

1. C. Y. Ting, S. S. Iyer, C. M. Osburn, G. J. Hu, and A. M. Schweighart, in “VLSI Science and Technology/1982,” C. J. Dell'Oca and W. M. Bullis, Editors, p. 213, The Electrochemical Society Softbound Proceedings Series, Pennington, NJ (1982).
2. C. K. Lau, Y. C. See, D. B. Scott, J. M. Bridges, S. M. Perma, and R. D. Davies, IEDM Tech. Dig., 714 (1982).
3. H. K. Park, J. Sachitano, G. Eiden, E. Lane, and T. Yamaguchi, J. Vac. Sci. Technol., A, 2, 259 (1984).
4. M. E. Alperin, T. C. Holloway, R. A. Haken, C. D. Gosmeyer, R. V. Karbaugy, and W. D. Parmantie, IEEE Trans. Electron Devices, ed-32, 141 (1985).
5. C. K. Lau, Abstract 371, p. 569, The Electrochemical Society Extended Abstracts, Vol. 83–1, San Francisco, CA, May 8–13.
6. S. S. Iyer, C. Y. Ting, and P. M. Fryer, Journal of the Electrochemical Society, 132, 2240 (1985).
7. C. Y. Ting, M. Wittmer, S. S. Iyer, and S. B. Brodsky, Journal of the Electrochemical Society, 131, 2934 (1984).
8. C. Y. Wong, L. K. Wang, P. A. McFarland, and C. Y. Ting, Submitted to J. Appl. Phys.