POWER AND NOISE PERFORMANCE OF THE PSEUDOMORPHIC MODULATION DOPED FIELD EFFECT TRANSISTOR AT 60 GHz.

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1986, Pages 464-466

  Henderson, T ^a   Aksun, M I ^a   Peng, C K ^a   Morkoc, H ^a   Chao, P C ^a   Smith, P M ^a   Duh, K H G ^a   Lester, L F ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; TRANSISTORS - NOISE;

60GHZ OPERATION; HIGH REVERSE BREAKDOWN VOLTAGE; PSEUDOMORPHIC MODULATION-DOPED FET (MODFET); QUARTER-MICROWAVE GATE LENGTH;

TRANSISTORS, FIELD EFFECT;

EID: 0022957463     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/iedm.1986.191220     Document Type: Conference Paper

References (6)