BREAKDOWN MECHANISMS IN MOS CAPACITORS FOLLOWING ELECTRICAL OVERSTRESS.

Electrical Overstress/Electrostatic Discharge Symposium Proceedings

Volumn , Issue , 1986, Pages 200-207

  Bridgwood, Michael A ^a  

^a CLEMSON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; SEMICONDUCTOR DEVICES, MOS;

BREAKDOWN SITES; DAMAGE SITES; ELECTRICAL OVERSTRESS; INJECTED PULSE WIDTH; MOS CAPACITORS; N-TYPE WAFERS;

CAPACITORS;

EID: 0022955354     PISSN: 07395159     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)