HIGH PERFORMANCE LDD GaAs MESFET WITH A REFRACTORY METAL GATE.

Conference on Solid State Devices and Materials

Volumn , Issue , 1986, Pages 383-386

  Asai, Shuji ^a   Goto, Norio ^a   Kanamori, Mikio ^a   Tanaka, Yuji ^a   Furutsuka, Takashi ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

REFRACTORY METALS; SEMICONDUCTING GALLIUM ARSENIDE;

CARRIER CONCENTRATION; HIGH PERFORMANCE; LDD (LIGHTLY-DOPED DRAIN) TECHNOLOGY; MESFET; PROPAGATION DELAY; REFACTORY METAL GATES;

TRANSISTORS, FIELD EFFECT;

EID: 0022901411     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)