Temperature Dependence of Electromechanical Properties of LGS Crystals

physica status solidi (a)

Volumn 98, Issue 2, 1986, Pages K109-K114

  Ilyaev, A B ^a   Umarov, B S ^a   Shabanova, L A ^b   Dubovik, M F ^c  

^a Academy of Sciences of the Tadzhik SSR ^*

^b KIRENSKY INSTITUTE OF PHYSICS   (Russian Federation)

^c Monokristalreaktiv Institute ^*

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR MATERIALS - DIELECTRIC PROPERTIES;

ELECTROMECHANICAL PROPERTIES; HIGH TEMPERATURE PROPERTIES; LANTHANUM GALLIUM SILICATE (LGS); LOW TEMPERATURE PROPERTIES;

CRYSTALS;

EID: 0022888882     PISSN: 00318965     EISSN: 1521396X     Source Type: Journal    
DOI: 10.1002/pssa.2210980243     Document Type: Article

References (9)

1. Measurement of the 25°C Zero-Field Elastic Moduli of Quartz by High-Frequency Plane-Wave Propagation