DISCOVERY OF HEAVY-ION INDUCED LATCHUP IN CMOS/EPI DEVICES.

IEEE Transactions on Nuclear Science

Volumn NS-33, Issue 6, 1986, Pages

  Nichols, D K ^a   Price, W E ^a   Shoga, M A ^a   Duffey, J ^a   Kolasinsky, W A ^a   Koga, R ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ION BEAMS;

HEAVY IONS EFFECT; RADIATION-INDUCED LATCHUP;

SEMICONDUCTOR DEVICES, MOS;

EID: 0022883491     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (2)