An Accurate DC Model for High-Voltage Lateral DMOS Transistors Suited for CACD

IEEE Transactions on Electron Devices

Volumn 33, Issue 12, 1986, Pages 1964-1970

  Claessen, H Rene ^a   Van Der Zee, Piet ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, FIELD EFFECT - MATHEMATICAL MODELS;

COMPUTER AIDED CIRCUIT DESIGN (CACD); DOUBLE-DIFFUSED MOST (DMOST); HIGH-VOLTAGE LATERAL DMOST; MOS TRANSISTORS (MOST); PARAMETER EXTRACTION;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0022880484     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1986.22854     Document Type: Article

References (9)

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