ANISOTROPIC PROPERTIES OF THE LOW T ESR SIGNAL FROM P//b//0 CENTERS LOCATED AT THE (111) Si/SiO//2 INTERFACE.

Volumn , Issue , 1986, Pages 25-28

  Stesmans, A ^a   Braet, J ^a  

^a UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS - ATOMIC STRUCTURE; SEMICONDUCTING SILICON; SEMICONDUCTOR MATERIALS - ANISOTROPY;

ANISOTROPIC PROPERTIES; SILICON/SILICON DIOXIDE INTERFACE;

SEMICONDUCTOR DEVICES;

EID: 0022863005     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)