Study of the Quasi-Saturation Effect in VDMOS Transistors

IEEE Transactions on Electron Devices

Volumn 33, Issue 11, 1986, Pages 1710-1716

  Darwish, Mohamed N ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MOS - COMPUTER AIDED ANALYSIS;

2-D SIMULATION; QUASI-SATURATION EFFECT; VDMOS TRANSISTORS;

TRANSISTORS;

EID: 0022809306     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1986.22732     Document Type: Article

References (10)

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2. A. W. Wieder, C. Werener, and J. T. Tihanyi, “2-D analysis of he negative resistance region of vertical power MOS-transistors,” in IEDM Tech. Dig., p. 95, Dec. 1980.
3. W. Shockley, “A unipolar ‘field-effect’ transistor,” Proc. IRE, vol. 40, p. 1365, Nov. 1952.
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6. B. R. Penumalli, “Numerical aspects of IC process simulation,” presented at the Joint SIAM-IEEE Electron Devices Soc. Conf. Numerical Simulation VLSI Devices, Boston MA, Nov. 1982.
7. M. N. Darwish and K. Board, “Optimization of breakdown voltage and on-resistance of VDMOS transistors,” IEEE Trans. Electron Devices, vol. ED-31, no. 12, p. 1769, Dec. 1984.
8. C. Hu, M. Chi, and V. M. Patel, “Optimum design of power MOSFET's,” IEEE Trans. Electron Devices, vol. ED-31, no. 12, p. 1693, Dec. 1984.
9. K. Lehovec and R. S. Miller, “Field distribution in field-effect transistor at large drain voltages,” IEEE Trans. Electron Devices, vol. ED-22, no. 5, p. 273, May 1975.
10. E. J. Ryder, “Mobility of holes and electrons in high electric fields,” Phys. Rev., vol. 90, p. 766, June 1953.