Al-Ge OHMIC CONTACTS TO N-TYPE GAAS.

Electron device letters

Volumn EDL-7, Issue 11, 1986, Pages 603-604

  Zuleeg, Rainer ^a   Friebertshauser, Paul E ^a   Stephens, J M ^a   Watanabe, S H ^a  

^a BOEING COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM AND ALLOYS; ELECTRIC MEASUREMENTS - RESISTANCE; GERMANIUM AND ALLOYS; INTEGRATED CIRCUITS - DESIGN; SEMICONDUCTING GALLIUM ARSENIDE;

ALUMINUM-GERMANIUM; LOWEST CONTACT RESISTANCE; TRANSFER LENGTH TRANSMISSION LINE STRUCTURE;

ELECTRIC CONTACTS, OHMIC;

EID: 0022808955     PISSN: 01938576     EISSN: None     Source Type: Journal    
DOI: 10.1109/edl.1986.26488     Document Type: Article

References (3)