-
1
-
-
0022683173
-
Gate-length dependence of the speed of SSI circuits using submicrometer selectively doped heterostructure transistor technology
-
May
-
N. J. Shah, S. S. Pei, C.W. Tu, and R. C. Tiberio “Gate-length dependence of the speed of SSI circuits using submicrometer selectively doped heterostructure transistor technology,” IEEE Trans. Electron Devices, vol. ED-33, pp. 543–547, May 1986.
-
(1986)
IEEE Trans. Electron Devices
, vol.33
, pp. 543-547
-
-
Shah, N.J.1
Pei, S.S.2
Tu, C.W.3
Tiberio, R.C.4
-
2
-
-
0022329781
-
A high-speed 4 × 4 bit parallel multiplier using selectively doped heterostructure transistors
-
A. R. Schlier, S. S. Pei, N. J. Shah, C. W. Tu, and G. E. Mahoney, “A high-speed 4 × 4 bit parallel multiplier using selectively doped heterostructure transistors,” in Proc. IEEE GaAs IC Symp., pp. 91–93, 93, 1985.
-
(1985)
Proc. IEEE GaAs IC Symp.
, pp. 91-93
-
-
Schlier, A.R.1
Pei, S.S.2
Shah, N.J.3
Tu, C.W.4
Mahoney, G.E.5
-
3
-
-
84941433108
-
New device structure for 4Kb HEMT SRAM
-
S. Kuroda, T. Mimura, M. Suzuki, N. Kobayashi, K. Nishiuchi, A. Shibatomi, and M. Abe, “New device structure for 4Kb HEMT SRAM,” in Proc. IEEE GaAs Symp., pp. 125–128, 1985.
-
(1985)
Proc. IEEE GaAs Symp.
, pp. 125-128
-
-
Kuroda, S.1
Mimura, T.2
Suzuki, M.3
Kobayashi, N.4
Nishiuchi, K.5
Shibatomi, A.6
Abe, M.7
-
4
-
-
0021204462
-
Parasitic MESFET in (Al,Ga)As/GaAs modulation doped FET's and MODFET FET characterization
-
K. Lee, M. S. Shur, T. J. Drummond, and H. Morkoç “Parasitic MESFET in (Al,Ga)As/GaAs modulation doped FET's and MODFET FET characterization,” IEEE Trans. Electron Devices, vol. ED-31, pp. 29–35, 1984.
-
(1984)
IEEE Trans. Electron Devices
, vol.ED-31
, pp. 29-35
-
-
Lee, K.1
Shur, M.S.2
Drummond, T.J.3
Morkoç, H.4
-
5
-
-
0021376825
-
Subbands and charge control in a two-dimensional electron gas field-effect transistor
-
B. Vinter, “Subbands and charge control in a two-dimensional electron gas field-effect transistor,” Appl. Phys. Lett., vol. 44, pp. 307–309, 1984.
-
(1984)
Appl. Phys. Lett.
, vol.44
, pp. 307-309
-
-
Vinter, B.1
-
6
-
-
0021598308
-
Saturation in the transfer characteristics of (Al,Ga)As/GaAs modulation-doped field-effect transistor at 77 K
-
W. T. Masselink, T. J. Drummond, J. Klem, W. Kopp, Y. C. Chang, F. Ponse, and H. Morkoç “Saturation in the transfer characteristics of (Al,Ga)As/GaAs modulation-doped field-effect transistor at 77 K,” Appl. Phys. Lett., vol. 45, pp. 1190–1192, 1984.
-
(1984)
Appl. Phys. Lett.
, vol.45
, pp. 1190-1192
-
-
Masselink, W.T.1
Drummond, T.J.2
Klem, J.3
Kopp, W.4
Chang, Y.C.5
Ponse, F.6
Morkoç, H.7
-
7
-
-
0022027065
-
The influence of donor neutralization on the transfer characteristic of MODFET's at 77 K: Theory and experiment
-
— “The influence of donor neutralization on the transfer characteristic of MODFET's at 77 K: Theory and experiment,” IEEE Trans. Electron Devices, vol. ED-32, pp. 713–716, 1985.
-
(1985)
IEEE Trans. Electron Devices
, vol.ED-32
, pp. 713-716
-
-
Masselink, W.T.1
Drummond, T.J.2
Klem, J.3
Kopp, W.4
Chang, Y.C.5
Ponse, F.6
Morkoç, H.7
-
8
-
-
0022114975
-
Gate capacitance-voltage characteristics of MODFET's: Its effect on transconductance
-
M. J. Moloney, F. Ponse, and H. Morkoç “Gate capacitance-voltage characteristics of MODFET's: Its effect on transconductance,” IEEE Trans. Electron Devices, vol. ED-32, pp. 1675–1684, 1985.
-
(1985)
IEEE Trans. Electron Devices
, vol.ED-32
, pp. 1675-1684
-
-
Moloney, M.J.1
Ponse, F.2
Morkoç, H.3
-
9
-
-
0004457553
-
Electron energy levels in GaAs-AlGaAs heterojunctions
-
F. Stern and S. Das Sarma “Electron energy levels in GaAs-AlGaAs heterojunctions,” Phys. Rev. B, vol. 30, pp. 840–848, 1984.
-
(1984)
Phys. Rev. B
, vol.30
, pp. 840-848
-
-
Stern, F.1
Das Sarma, S.2
-
10
-
-
0021411721
-
Bias dependence of capacitance in modulation-doped FET's at 4 GHz
-
D. Arnold, W. Kopp, R. Fischer, J. Klem, and H. Morkoç “Bias dependence of capacitance in modulation-doped FET's at 4 GHz,” IEEE Electron Device Lett., vol. EDL-5, pp. 123–125, 1984.
-
(1984)
IEEE Electron Device Lett.
, vol.EDL-5
, pp. 123-125
-
-
Arnold, D.1
Kopp, W.2
Fischer, R.3
Klem, J.4
Morkoç, H.5
-
11
-
-
0021501397
-
Microwave characterization of (Al,Ga)As/GaAs modulation-doped doped FET's: Bias dependence of small-signal parameters
-
D. J. Arnold, R. Fischer, W. Kopp, T. S. Henderson, and H. Morkog “Microwave characterization of (Al,Ga)As/GaAs modulation-doped doped FET's: Bias dependence of small-signal parameters,” IEEE Trans. Electron Devices, vol. ED-31, pp. 1399–1402, 1984.
-
(1984)
IEEE Trans. Electron Devices
, vol.ED-31
, pp. 1399-1402
-
-
Arnold, D.J.1
Fischer, R.2
Kopp, W.3
Henderson, T.S.4
Morkog, H.5
-
12
-
-
0022137408
-
Measurement of electron velocity-field characteristics in modulation-doped structures using the geometrical magnetoresistance method
-
W. T. Masselink, W. Kopp, T. Henderson, and H. Morkoç “Measurement of electron velocity-field characteristics in modulation-doped structures using the geometrical magnetoresistance method,” IEEE Electron Device Lett., vol. EDL-6, pp. 539–541, 1985.
-
(1985)
IEEE Electron Device Lett.
, vol.EDL-6
, pp. 539-541
-
-
Masselink, W.T.1
Kopp, W.2
Henderson, T.3
Morkoç, H.4
-
13
-
-
84941498029
-
DC and microwave models for AlxGa 1-xAs/GaAs high electron mobility transistors
-
M. H. Weiler and Y. Ayasli “DC and microwave models for AlxGa 1-xAs/GaAs high electron mobility transistors,” IEEE Trans. Electron Devices, vol. ED-31, pp. 1854–1861, 1984.
-
(1984)
IEEE Trans. Electron Devices
, vol.ED-31
, pp. 1854-1861
-
-
Weiler, M.H.1
Ayasli, Y.2
-
14
-
-
0021517808
-
Determination of carrier saturation velocity in short-gate length modulation-doped FET's
-
M. B. Das, W. Kopp, and H. Morkoç “Determination of carrier saturation velocity in short-gate length modulation-doped FET's,” IEEE Electron Device Lett., vol. EDL-5, pp. 446–449, 1984.
-
(1984)
IEEE Electron Device Lett.
, vol.EDL-5
, pp. 446-449
-
-
Das, M.B.1
Kopp, W.2
Morkoç, H.3
-
15
-
-
0022083780
-
Quasi-Fermi level bending in MODFET's and its effect on FET transfer characteristics
-
F. Ponse, W. T. Masselink, and H. Morkoç “Quasi-Fermi level bending in MODFET's and its effect on FET transfer characteristics,” IEEE Trans. Electron Devices, vol. ED-32, pp. 1017–1023, 1985.
-
(1985)
IEEE Trans. Electron Devices
, vol.ED-32
, pp. 1017-1023
-
-
Ponse, F.1
Masselink, W.T.2
Morkoç, H.3
-
16
-
-
0021502705
-
Delay analysis of Si NMOS Gbits/s logic circuits
-
R. J. Bayruns, R. L. Johnston, D. L. Fraser, Jr., and S. C. Fang “Delay analysis of Si NMOS Gbits/s logic circuits,” IEEE J. Solid-State State Circuits, vol. SC-19, pp. 755–764, 1984.
-
(1984)
IEEE J. Solid-State State Circuits
, vol.SC-19
, pp. 755-764
-
-
Bayruns, R.J.1
Johnston, R.L.2
Fraser, D.L.3
Fang, S.C.4
-
17
-
-
0021640711
-
Ultrahigh-speed integrated circuits with selectively doped heterostructure transistors
-
S. S. Pei, N. J. Shah, R. H. Hendel, C. W. Tu, and R. Dingle, “Ultrahigh-speed integrated circuits with selectively doped heterostructure transistors,” in Proc. IEEE GaAs IC Symp., pp. 129–132, 1984.
-
(1984)
Proc. IEEE GaAs IC Symp.
, pp. 129-132
-
-
Pei, S.S.1
Shah, N.J.2
Hendel, R.H.3
Tu, C.W.4
Dingle, R.5
-
18
-
-
2342604350
-
Noise margin and noise immunity in logic circuits
-
C. F. Hill “Noise margin and noise immunity in logic circuits,” Microelectronics, vol. 1, pp. 16–21, 1968.
-
(1968)
Microelectronics
, vol.1
, pp. 16-21
-
-
Hill, C.F.1
-
19
-
-
0017980692
-
Static and dynamic noise margins of logic circuits
-
J. Lohstroh “Static and dynamic noise margins of logic circuits,” IEEE J. Solid-State Circuits, vol. SC-14, pp. 591–598, 1979.
-
(1979)
IEEE J. Solid-State Circuits
, vol.SC-14
, pp. 591-598
-
-
Lohstroh, J.1
-
20
-
-
0022290354
-
Time simulation of fast GaAs logic circuits with their transmission lines
-
P. Crozat, L. Chusseau, M. Bedouani, A. Zounon, and R. Adde, “Time simulation of fast GaAs logic circuits with their transmission lines,” in Proc. IEEE GaAs IC Symp., pp. 191–193, 1985.
-
(1985)
Proc. IEEE GaAs IC Symp.
, pp. 191-193
-
-
Crozat, P.1
Chusseau, L.2
Bedouani, M.3
Zounon, A.4
Adde, R.5
-
21
-
-
0020141366
-
Speed power in planar two-dimensional electron gas FET DCFL circuit: A theoretical approach
-
D. Delagebeaudeuf and N. T. Linh “Speed power in planar two-dimensional electron gas FET DCFL circuit: A theoretical approach,” Electron. Lett., vol. 18, pp. 510–512, 1982.
-
(1982)
Electron. Lett.
, vol.18
, pp. 510-512
-
-
Delagebeaudeuf, D.1
Linh, N.T.2
-
22
-
-
0022099261
-
Modeling of GaAs/AlGaAs MODFET inverters and ring oscillators
-
A. Ketterson, M. Moloney, and H. Morkoç “Modeling of GaAs/AlGaAs MODFET inverters and ring oscillators,” IEEE Electron Device Lett., vol. EDL-6, pp. 359–362, 1985.
-
(1985)
IEEE Electron Device Lett.
, vol.EDL-6
, pp. 359-362
-
-
Ketterson, A.1
Moloney, M.2
Morkoç, H.3
-
23
-
-
0020809751
-
High-speed low-voltage ring oscillators based on selectively doped heterojunction transistors
-
M. D. Feuer, R. H. Hendel, R. A. Kiehl, J. C. M. Hwang, V. G. Keramidas, C. L. Allyn, and R. Dingle “High-speed low-voltage ring oscillators based on selectively doped heterojunction transistors,” IEEE Electron Device Lett., vol. EDL-4, pp. 306–307, 1983.
-
(1983)
IEEE Electron Device Lett.
, vol.EDL-4
, pp. 306-307
-
-
Feuer, M.D.1
Hendel, R.H.2
Kiehl, R.A.3
Hwang, J.C.M.4
Keramidas, V.G.5
Allyn, C.L.6
Dingle, R.7
-
24
-
-
0021640354
-
Realization of sub-10 ps switching times in selectively doped (Al,Ga)As/GaAs heterostructure transistors
-
R. H. Hendel, S. S. Pei, C. W. Tu, B. J. Roman, N. J. Shah, and R. Dingle, “Realization of sub-10 ps switching times in selectively doped (Al,Ga)As/GaAs heterostructure transistors,” in IEDM Tech. Dig., pp. 857–858, 1984.
-
(1984)
IEDM Tech. Dig.
, pp. 857-858
-
-
Hendel, R.H.1
Pei, S.S.2
Tu, C.W.3
Roman, B.J.4
Shah, N.J.5
Dingle, R.6
-
25
-
-
0020933971
-
Performance comparison of highly integrated circuits: Silicon NMOS versus gallium arsenide normally-off MESFET technology
-
H. Gesch, W. Kellner, and H. Kniepkamp “Performance comparison of highly integrated circuits: Silicon NMOS versus gallium arsenide normally-off MESFET technology,” IEEE Trans. Electron Devices, vol. ED-30, pp. 1640–1647, 1983.
-
(1983)
IEEE Trans. Electron Devices
, vol.ED-30
, pp. 1640-1647
-
-
Gesch, H.1
Kellner, W.2
Kniepkamp, H.3
-
26
-
-
0017549022
-
GaAs MESFET logic with 4-GHz clock rate
-
R. L. Van Tuyl, C. A. Liechti, R. E. Lee, and E. Gowen “GaAs MESFET logic with 4-GHz clock rate,” IEEE J. Solid-State Circuits, vol. SC-12, pp. 485–496, 1977.
-
(1977)
IEEE J. Solid-State Circuits
, vol.SC-12
, pp. 485-496
-
-
Van Tuyl, R.L.1
Liechti, C.A.2
Lee, R.E.3
Gowen, E.4
-
27
-
-
0021640244
-
Microwave characterization of very high transconductance MODFET
-
L. H. Camnitz, P. J. Tasker, H. Lee, D. Van der Merwe, and L. F. Eastman, “Microwave characterization of very high transconductance MODFET,” in IEDM Tech. Dig., pp. 360–363, 1984.
-
(1984)
IEDM Tech. Dig.
, pp. 360-363
-
-
Camnitz, L.H.1
Tasker, P.J.2
Lee, H.3
Van der Merwe, D.4
Eastman, L.F.5
-
28
-
-
0022017613
-
11-ps ring oscillators with submicrometer selectively doped heterostructure structure transistors
-
N. J. Shah, S. S. Pei, C. W. Tu, R. H. Hendel, and R. C. Tiberio “11-ps ring oscillators with submicrometer selectively doped heterostructure structure transistors,” Electron. Lett., vol. 21, pp. 151–152, 1985.
-
(1985)
Electron. Lett.
, vol.21
, pp. 151-152
-
-
Shah, N.J.1
Pei, S.S.2
Tu, C.W.3
Hendel, R.H.4
Tiberio, R.C.5
-
29
-
-
0022136904
-
Pseudomorphic InGaAs/GaAs single quantum well high electron mobility transistor
-
J. J. Rosenberg, M. Benlamri, P. D. Kirchner, J. M. Woodall, and G. D. Petit “Pseudomorphic InGaAs/GaAs single quantum well high electron mobility transistor,” IEEE Electron Device Lett., vol. EDL-6, pp. 471–493, 1985.
-
(1985)
IEEE Electron Device Lett.
, vol.EDL-6
, pp. 471-493
-
-
Rosenberg, J.J.1
Benlamri, M.2
Kirchner, P.D.3
Woodall, J.M.4
Petit, G.D.5
-
30
-
-
0022113313
-
Strained-quantum-well modulation-doped field-effect transistor
-
T. E. Zipperian and T. J. Drummond “Strained-quantum-well modulation-doped field-effect transistor,” Electron. Lett., vol. 21, pp. 823–824, 1985.
-
(1985)
Electron. Lett.
, vol.21
, pp. 823-824
-
-
Zipperian, T.E.1
Drummond, T.J.2
-
31
-
-
0022242042
-
High-transconductance InGaAs/AlGaAs pseudomorphic modulation-doped field effect transistor
-
A. Ketterson, M. Moloney, W. T. Masselink, J. Klem, R. Fischer, W. Kopp, and H. Morkoç “High-transconductance InGaAs/AlGaAs pseudomorphic modulation-doped field effect transistor,” IEEE Electron Device Lett., vol. EDL-6, pp. 628–630, 1985.
-
(1985)
IEEE Electron Device Lett.
, vol.EDL-6
, pp. 628-630
-
-
Ketterson, A.1
Moloney, M.2
Masselink, W.T.3
Klem, J.4
Fischer, R.5
Kopp, W.6
Morkoç, H.7
|