Scattering matrix theory of transport in heterostructures

Semiconductor Science and Technology

Volumn 1, Issue 4, 1986, Pages 285-290

  Marsh, A C ^a   Inkson, J C ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS - SCATTERING; MATHEMATICAL TECHNIQUES - MATRIX ALGEBRA;

SCATTERING MATRIX THEORY;

SEMICONDUCTOR DEVICES;

EID: 0022791538     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/1/4/008     Document Type: Article

References (18)

1. Band-gap engineering via graded gap, superlattice, and periodic doping structures: Applications to novel photodetectors and other devices
2. Asymmetric quantum well electron barrier diode
3. Transport characteristics of L-point and Γ-point electrons through GaAs–Ga1−xAlxAs–GaAs(111) double heterojunctions
4. The electronic properties of GaAs/AlGaAs heterojunctions