Electronic properties of the interface between si and ti02deposited at very low temperatures

Japanese Journal of Applied Physics

Volumn 25, Issue 9 R, 1986, Pages 1288-1291

  Fuyuki, Takashi ^a   Matsunami, Hiroyuki ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES - SEMICONDUCTOR INSULATOR BOUNDARIES; TITANIUM OXIDES - THIN FILMS;

ANATASE; CARRIER MOBILITY; INTERFACE ELECTRONIC PROPERTIES; INVERSION LAYER;

SEMICONDUCTOR DEVICES, MIS;

EID: 0022778370     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.25.1288     Document Type: Article

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