Intervalence band absorption in semiconductor laser materials

Semiconductor Science and Technology

Volumn 1, Issue 2, 1986, Pages 116-120

  Childs, G N ^a   Brand, S ^a   Abram, R A ^a  

^a DURHAM UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

OPTICAL COMMUNICATION; OPTICAL FIBERS; SEMICONDUCTOR MATERIALS;

HOLE CONCENTRATIONS; INTERVALENCE BAND ABSORPTION; MOMENTUM MATRIX; TEMPERATURE SENSITIVITY; THRESHOLD CURRENTS;

LASERS, SEMICONDUCTOR;

EID: 0022762694     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/1/2/004     Document Type: Article

References (21)

1. The Influence of Alloy Scattering on Electrons and Holes in In1-xGaxAsyP1-y
2. The temperature dependence of the threshold current of GaInAsP/InP DH lasers
3. The effects of loss and nonradiative recombination on the temperature dependence of threshold current in 1.5-1.6 µm GalnAsP/InP lasers
4. IIIA-4 a comparison of temperature dependence of lasing characteristics of 1.3 µm InGaAsP and GaAs DH lasers
5. Temperature Sensitive Threshold Current of InGaAsP–InP Double Heterostructure Lasers
6. The effect of intervalence band absorption on the thermal behavior of InGaAsP lasers
7. Losses in GaInAs(P)/InP and GaAlSb(As)/GaSb lasers - The influence of the split-off valence band
8. Band-to-band Auger recombination effect on InGaAsP laser threshold
9. High temperature characteristics of stripe-geometry InGaAsP/InP double-heterostructure lasers
10. Influences of interfacial recombination on oscillation characteristics of InGaAsP/InP DH lasers