Modeling of 0.1-μm MOSFET on SOI Structure Using Monte Carlo Simulation Technique

IEEE Transactions on Electron Devices

Volumn 33, Issue 7, 1986, Pages 1005-1011

  Throngnumchai, Kraisorn ^a   Asada, Kunihiro ^a   Sugano, Takuo ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL STATISTICS - MONTE CARLO METHODS; SURFACES - ROUGHNESS MEASUREMENT;

AVALANCHE BREAKDOWN; INTRAVALLEY SCATTERING; SHORT-CHANNEL EFFECTS SUPPRESSION; SILICON ON INSULATOR (SOI) STRUCTURE;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0022753908     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1986.22606     Document Type: Article

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