A Four-State EEPROM Using Floating-Gate Memory Cells

IEEE Journal of Solid-State Circuits

Volumn 22, Issue 3, 1987, Pages 460-463

  Bleiker, Christoph ^a   Melchior, Hans ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL MODELS;

ELECTRICALLY ERASABLE PROGRAMMABLE ROM (EEPROM); FOUR-STATE MEMORY CELL; READ ONLY MEMORY (ROM); RETENTION TIME; THERMIONIC EMISSION MODEL;

DATA STORAGE, DIGITAL;

EID: 0022738392     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/JSSC.1987.1052751     Document Type: Article

References (6)

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