SCOPUS 정보 검색 플랫폼

Volumn 58, Issue 11, 1986, Pages 823-824

First order Raman scattering in GaN

a CNR (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

RAMAN SCATTERING;

DIELECTRIC CONSTANT; EFFECTIVE CHARGE; FIRST ORDER RAMAN SCATTERING; GALLIUM NITRIDE; OPTICAL MODELS;

GALLIUM COMPOUNDS;

EID: 0022737191 PISSN: 00381098 EISSN: None Source Type: Journal
DOI: 10.1016/0038-1098(86)90778-7 Document Type: Article

Times cited : (78)

References (10)

2
- 0015433631
- (1972) Solid State Commun. , vol.11 , pp. 1351
- Lemos¹ Arguello² Leite³

3
- 36049056085
- (1969) Phys. Rev. , vol.181 , pp. 1351
- Arguello¹ Rousseau² Porto³

6
- 0004037540
- A. Anderson, Dekker, New York
- (1973) The Raman Effect , pp. 811
- Wilkinson¹

7
- 84918049077
- C.Y. Chang, National Cheng Kung University, Tainan Taiwan
- (1981) Proc. of 1981 Int. Optoelectronics Workshop , pp. 55
- Gershenzon¹ Ching-Hwa Wang² Ta³

9
- 0015109299
- Refractive index of GaN
- (1971) Physica Status Solidi (a) , vol.6 A , pp. 445
- Ejder¹

10
- 84918046354
- T.S. Moss, M. Balkanski, North-Holland, Amsterdam
- (1982) Handbook on Semiconductors , vol.2 , pp. 209
- Martinez¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.