On Gain-Bandwidth Product for Distributed Amplifiers

IEEE Transactions on Microwave Theory and Techniques

Volumn 34, Issue 6, 1986, Pages 736-738

  Becker, R C ^a   Beyer, J B ^b  

^a Unisys   (United States)

^b UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, FIELD EFFECT;

DESIGN TRADEOFF; DISTRIBUTED AMPLIFIER; MAXIMUM GAIN-BANDWIDTH PRODUCT; METAL SEMICONDUCTOR FET (MESFET);

AMPLIFIERS, MICROWAVE;

EID: 0022736064     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/TMTT.1986.1133426     Document Type: Article

References (2)

1. J. B. Beyer, S. N. Prasad, R. C. Becker, J. E. Nordman, and G. K. Hohenwarter, “MESFET-distributed amplifier design guidelines,” IEEE Trans. Microwaves Theory Tech., MTT-32, pp. 268–275, Mar. 1984.
2. R. C. Becker, “Constraints in the design of GaAs MESFET MMIC-distributed amplifiers,” Ph.D. thesis, Univ. of Wisconsin, pp. 128–144, 1985.