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Volumn 22, Issue 3, 1987, Pages 430-436

Influences on Soft Error Rates in Static RAM's

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; MATHEMATICAL MODELS;

EID: 0022733111     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/JSSC.1987.1052743     Document Type: Article
Times cited : (34)

References (16)
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    • (1985) IEEE Trans. Electron Devices , vol.ED-32 , Issue.2 , pp. 463-470
    • Chappell, B.1    Schuster, S.E.2    Sai-Halasz, G.A.3
  • 2
    • 0022418035 scopus 로고
    • Alpha-particle-induced failure modes in dynamic RAM's
    • Jan.
    • P. M. Carter and B. R. Wilkins, “Alpha-particle-induced failure modes in dynamic RAM's,” IEE Electron. Lett., vol. 21, no. 1, pp. 38–39, Jan. 1985.
    • (1985) IEE Electron. Lett. , vol.21 , Issue.1 , pp. 38-39
    • Carter, P.M.1    Wilkins, B.R.2
  • 3
    • 0020239605 scopus 로고
    • The application of uranium fission track autoradiography as a method of investigating the problem of soft errors in VLSI silicon memory devices
    • D. Mapper, D. J. Bolus, and J. Stephen, “The application of uranium fission track autoradiography as a method of investigating the problem of soft errors in VLSI silicon memory devices,” in Proc. Int. Conf. Solid State Nuckr Track Detectors,.1981, pp. 815–823.
    • (1981) Proc. Int. Conf. Solid State Nuckr Track Detectors , pp. 815-823
    • Mapper, D.1    Bolus, D.J.2    Stephen, J.3
  • 5
    • 84939366294 scopus 로고
    • High performance 3 Am memories
    • Mar.
    • Y. Tominaga, T. Yasai, and H. Kawamoto, “High performance 3 Am memories,” Electron. Eng., vol. 45, no. 663, p. 101, Mar. 1982.
    • (1982) Electron. Eng. , vol.45 , Issue.663 , pp. 101
    • Tominaga, Y.1    Yasai, T.2    Kawamoto, H.3
  • 8
    • 0019075557 scopus 로고
    • A high performance sense amplifier for a 5 V dynamic RAM
    • Oct.
    • J. J. Barnes and J. Y. Chan, “A high performance sense amplifier for a 5 V dynamic RAM,” IEEE J. Solid-State Circuits, vol. SC-15, no. 5, pp. 831–838, Oct. 1980.
    • (1980) IEEE J. Solid-State Circuits , vol.SC-15 , Issue.5 , pp. 831-838
    • Barnes, J.J.1    Chan, J.Y.2
  • 9
    • 0020811152 scopus 로고
    • Influences of circuit design on the characteristics of soft error in MOS dynamic RAMs, Electron. Commun. Japan, vol
    • T. Yoshihara, K. Mashiko, S. Takano, and T. Nakano, “Influences of circuit design on the characteristics of soft error in MOS dynamic RAMs, Electron. Commun. Japan, vol. B6-C. no. 9, pp. 100–106, 1983.
    • (1983) , vol.B6-C , pp. 100-106
    • Yoshihara, T.1    Mashiko, K.2    Takano, S.3    Nakano, T.4
  • 10
    • 0020091827 scopus 로고
    • Alpha-particle-induced field and enhanced collection of carriers
    • Feb.
    • C. Hu, “Alpha-particle-induced field and enhanced collection of carriers,” IEEE Electron Device Lett., vol. EDL-3, no. 2, pp. 31–34, Feb. 1982.
    • (1982) IEEE Electron Device Lett. , vol.EDL-3 , Issue.2 , pp. 31-34
    • Hu, C.1
  • 11
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    • A field-funnelling effect on the collection of alpha-particle-generated carriers in silicon devices
    • Apr.
    • C. M. Hsieh, P. C. Murley, and R. R. O'Brien, “A field-funnelling effect on the collection of alpha-particle-generated carriers in silicon devices,” IEEE Electron Device Lett., vol. EDL-2, no. 4, pp. 103–105, Apr. 1981.
    • (1981) IEEE Electron Device Lett. , vol.EDL-2 , Issue.4 , pp. 103-105
    • Hsieh, C.M.1    Murley, P.C.2    O'Brien, R.R.3
  • 12
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    • Modelling diffusion and collection of charge from ionizing radiation in silicon devices
    • Nov.
    • S. Kirkpatrick, “Modelling diffusion and collection of charge from ionizing radiation in silicon devices,” IEEE Trans. Electron Devices, vol. ED-26, no. 11, pp. 1742–1753, Nov. 1979.
    • (1979) IEEE Trans. Electron Devices , vol.ED-26 , Issue.11 , pp. 1742-1753
    • Kirkpatrick, S.1
  • 13
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    • The design of a 64 K CMOS SRAM
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    • T. Dent, “The design of a 64 K CMOS SRAM,” Electron. Eng., vol. 57, no. 706, pp. 51–58, Oct. 1985.
    • (1985) Electron. Eng. , vol.57 , Issue.706 , pp. 51-58
    • Dent, T.1
  • 14
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    • High performance, high density capacitively loaded FET static RAM
    • W. Wang, “High performance, high density capacitively loaded FET static RAM,” IBM Tech. Disci. Bull., vol. 27, no. 4A, pp. 1950–1951, 1984.
    • (1984) IBM Tech. Disci. Bull. , vol.27 , Issue.4A , pp. 1950-1951
    • Wang, W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.