A New On-Chip Voltage Converter for Submicrometer High-Density DRAM's

IEEE Journal of Solid-State Circuits

Volumn 22, Issue 3, 1987, Pages 437-441

  Furuyama, Tohru ^a   Watanabe, Yorji ^a   Ohsawa, Takashi ^a   Watanabe, Shigeyoshi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE, DIGITAL - RANDOM ACCESS; SEMICONDUCTOR DEVICES, MOSFET; TRANSISTORS;

4-MB DYNAMIC RAM (DRAM); ON-CHIP VOLTAGE CONVERTER; SUBMICROMETER TRANSISTORS;

VOLTAGE REGULATORS;

EID: 0022733092     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/JSSC.1987.1052744     Document Type: Article

References (4)

1. K. Itoh et al., “An experimental 1Mb DRAM with on-chip voltage limiter,” in ISSCC84 Dig. Tech. Papers, Feb. 1984, pp. 282–283.
2. T. Mano et al., “Submicron VLSI memory circuits,’ in ISSCC83 Dig. Tech: Papers, Feb. 1983, 234–235.
3. M. Takada et al., “A 4Mb DRAM with half internal voltage bit line precharge,” in ISSCC86 Dig. Tech. Papers, Feb. 1986, pp. 270–271.
4. T. Furuyama et al., “An experimental 4Mb CMOS DRAM,” in ISSCC86 Dig, Tech. Papers, Feb. 1986, pp. 272–273.