A study of the temperature dependence of the barrier energy in porous tin dioxide

Sensors and Actuators

Volumn 14, Issue 2, 1988, Pages 149-163

  Lantto, V ^a   Rompplainen, P ^a   Leppavuori S ^a  

^a UNIVERSITY OF OULU   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

CERAMIC MATERIALS - APPLICATIONS; SEMICONDUCTING ZINC COMPOUNDS - APPLICATIONS; SEMICONDUCTOR DEVICES; SENSORS - ELECTROCHEMICAL;

BARRIER ENERGY; POROUS TIN DIOXIDE; TEMPERATURE-PULSED SENSORS;

GASES;

EID: 0022732681     PISSN: 02506874     EISSN: None     Source Type: Journal    
DOI: 10.1016/0250-6874(88)80062-3     Document Type: Article

References (21)

1. Measurement of surface state energy levels of one-equivalent adsorbates on ZnO
2. Semiconducting gas sensors
3. Electrical properties of high-quality stannic oxide crystals
4. Defect structure and electronic donor levels in stannic oxide crystals
5. Investigative study on effect of pure and mixed gas systems on some resistive type metal oxide sensors under different experimental conditions
6. 2 s a gas sensor
7. Mechanisms of gas detection by metal oxide surface
8. Homogeneous semiconducting gas sensors: A comprehensive model
9. Effects of electronic charge transfer between adsorbate and solid on chemisorption and catalysis
10. 2-based thick-film sensor in combustion gases
11. Characteristics of semiconductor gas sensors: II Transient response to temperature change
12. Oxygen interaction of stoichiometric and non-stoichiometric ZnO prismatic surfaces
13. Sensing mechanism of thin film tin oxide
14. Hall. effect studies of oxygen chemisorption on zinc oxide
15. Adsorbed species of oxygen on dark and on illuminated zinc oxide
16. Reactions of oxygen with ZnO-10bar10 surfaces
17. − on XnO
18. 2 materials: II Electrical properties
19. DC conductivity of a random barrier network