XeCl EXCIMER LASER ANNEALING USED IN THE FABRICATION OF POLY-Si TFT'S'.

Electron device letters

Volumn EDL-7, Issue 5, 1986, Pages 276-278

  Sameshima, T ^a   Usui, S ^a   Sekiya, M ^a  

^a SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

LASER BEAMS - APPLICATIONS; LASERS, EXCIMER - APPLICATIONS; SEMICONDUCTOR DEVICES - FABRICATION;

LOW PROCESSING TEMPERATURE; POLYSILICON THIN FILM TRANSISTORS;

TRANSISTORS;

EID: 0022719826     PISSN: 01938576     EISSN: None     Source Type: Journal    
DOI: 10.1109/edl.1986.26372     Document Type: Article

References (6)